A newly designed planar stacked capacitor cell with high dielectric constant film for 256 Mbit DRAM

Eimori, T.; Ohno, Y.; Kimura, Hiroshi; Matsufusa, Jiro; Kishimura, S.; Yoshida, Asami; Sumitani, Hiroaki; Maruyama, Toshihiro; Hayashide, Y.; Moriizumi, K.; Katayama, Tatsuya; Asakura, M.; Horikawa, Tsuyoshi; Shibano, Teruo; Itoh, Hiromi; Sato, Kazunao; Namba, Kazuteru; Nishimura, Tadashi; Satoh, S.; Miyoshi, Hidenori

doi:10.1109/iedm.1993.347281

Cited by 17 publications

(2 citation statements)

References 4 publications

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“…1,2 In this type of capacitor memory cell platinum is used for the capacitor electrode material because BST crystallizes easily in the perovskite structure on the platinum surface, and because platinum is stable in the oxygen containing ambient of the BST deposition. To get sufficient memory cell capacitance, high-dielectric constant materials, such as thin barium strontium titanate ͑BST͒ film, have been investigated for use as the capacitor dielectric film of memory cells.…”

Section: Introductionmentioning

confidence: 99%

Sidewall deposition film in platinum etching with Ar/halogen mixed gas plasmas

Shibano¹,

Oomori²

1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Experimental studies of the deposition of films formed on the sidewalls of a photoresist pattern in the etching of platinum films with Ar and halogen mixed gas plasmas were performed. In platinum etching with Ar/halogen gas plasmas there is no enhancement of the etch rate by adding halogen gases, and deposition films are formed on the sidewall of a photoresist pattern. The thickness of the sidewall deposition film is minimized in etching with pure Ar plasma. The addition of halogens increases the thickness of the sidewall deposition film. These films were analyzed by x-ray photoelectron spectroscopy ͑XPS͒ to investigate their formation mechanism. Carbon was detected even in the deposition films formed during etching with gases that did not include carbon. From the results of XPS analysis it was found that the etching reaction products from the photoresist relate to the formation of these films, and that the reason for the increase in the film thickness is the increase in the etch rate of the photoresist by adding halogens. Therefore in the etching of platinum films it is important to suppress the etching of the photoresist to decrease the thickness of the sidewall deposition film.

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Section: Introductionmentioning

confidence: 99%

Sidewall deposition film in platinum etching with Ar/halogen mixed gas plasmas

Shibano¹,

Oomori²

1997

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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“…High dielectric SrTiO 3 (ST) and (Ba, Sr)TiO 3 (BST) have been widely investigated for possible application as dynamic random access memory (DRAM) cells. [1][2][3][4] In particular, BST thin films have received a great deal of attention because they have a room temperature paraelectric characteristic offering high dielectric constant, low leakage current, and large dielectric breakdown strength. Recently BST thin films have been prepared on various substrates by a variety of techniques such as sputtering, 5 liquid source chemical vapor deposition (LSCVD), 6 plasma-enhanced chemical vapor deposition (PECVD), 7 and laser ablation.…”

mentioning

confidence: 99%

Integration of High Dielectric ( Ba1 − x Sr x ) TiO3 Thin Films into New Barrier Layer Electrode Structures

Lee

Choi

Yoon

et al. 1999

J. Electrochem. Soc.

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false(Ba1−xSrxfalse)TiO3 (BST) films were deposited on the new electrode structures of normalPt/RuO2+normalTa/TiSi2/normalpoly‐normalSi/SiO2/normalSi (PRTS) and normalPt/RuO2+normalTa/normalpoly‐normalSi/SiO2/normalSi (PRS) by metallorganic chemical vapor deposition. The films deposited on PRTS show smoother morphologies than those on PRS. Titanium‐silicide false(TiSi2false) buffer layers formed on poly‐Si play an important role in decreasing the roughness of each layer as well as contact resistance between RuO2+normalTa and poly‐Si. The electrode structures showed a stable morphology after deposition of BST films and annealing at 750°C. The 80 nm thick BST films deposited on PRTS showed a dielectric constant of 240 and dissipation factor of 0.01 at 100 kHz. The BST films deposited on PRTS have a leakage current density of about 4.0×10−7A/cm2 at 190 kV/cm and breakdown strength of 290 kV/cm. © 1999 The Electrochemical Society. All rights reserved.

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