A new SPICE model of power P-I-N diode based on asymptotic waveform evaluation

Abstract

A new SPICE subcircuit model for power p-in diodes is proposed in this paper. The model is based on a moment-matching approximation of the ambipolar diffusion equation. It is shown that both the quasistatic model and the lumped-charge model can be obtained as low-order momentmatching approximations while new and more accurate models can be obtained from higher-order solutions. The proposed model takes into account emitter recombination in the highly doped end regions, conductivity modulation in the base and the moving-boundaries effect during reverse-recovery, showing good convergence properties and fast simulation times. Comparisons between the results of the SPICE model and both numerical device simulations and experimental results are presented.

An advanced VHDL-AMS PiN diode model: towards simulation-based design of power converters

“…A comparison with PiN diode model state‐of‐art should be preferred. Numerous PiN diode model are satisfying so far . However, as reported in , the switching parameter error between experimental and simulated results of the most published PiN diode model is around 12%: The model in , for example, is based on the state variable modeling to obtain a PiN diode model that taken into account the high injection level.…”

“…Accurate powers PiN diodes temperature‐dependent models are necessary to design a power electronic circuit . The model proposed in is intended to simulate reverse recovery for instance: it is a critical operation of a power diode inside a converter.…”

Modeling high speed MRI coil switching using PIN diodes

“…While useful for static measurements, these models suffer from an inability to adequately model the on-state resistance's current dependence or the off-state capacitance's voltage variation, making transient simulations of the PIN diode behavior problematic. There have been several research efforts recently to develop SPICE-compatible time domain models of the PIN diode with some success in modeling the forward bias on-state resistance of the device [1,2]. In these models, however, the reverse bias modeling performance has been less robust than the forward bias case.…”

A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devices

“…It details a method for assessing the trade-off between the width and the doping level of the diode epitaxial layer. Most published accurate models of the PiN diode have N D and W B as parameters [2][3][4][5]. These latter values are required for accurate systemlevel simulation of devices.…”