Abstract:Progress is reported towards the development of a new route to obtain cadmium sulfide (CdS) thin films by using ethylene-diamine-tetra-acetic acid (EDTA) ligand on the chemical bath deposition (CBD) method. Different chemical baths are used to study changes in the structures of the CdS films for different EDTA concentrations. X-ray diffraction (XRD) is used to prove the structural characterization of the samples, and to obtain the grain size with the Scherrer's equation. The pH variations during the growth als… Show more
“…Only anatase phase was observed in both samples. The crystal sizes (L c ) of TiO 2 before and after heat treatment were calculated using Scherrer's equation [23]: Absorbance (-)…”
“…Only anatase phase was observed in both samples. The crystal sizes (L c ) of TiO 2 before and after heat treatment were calculated using Scherrer's equation [23]: Absorbance (-)…”
“…The maximum carrier concentration value is 1.986 9 10 20 cm -3 for 250°C. However, further increase of substrate temperature reduced the carrier [28]. Figure 9 shows the variation of gas response at 600 K with different gas concentrations.…”
Transparent conducting CdO thin films were deposited on to glass substrates by spray pyrolysis technique. The depositions were carried out at different substrate temperatures with varying film thickness. The effects of substrate temperature on structural, optical and electrical properties of CdO thin films were systematically studied. The CdO films were polycrystalline in nature with cubic crystal structure showing preferential orientation along (111) direction. Wettability results confirmed that the hydrophobic character of CdO thin film is enhanced with increase in substrate temperatures. The average transmittance is about 80 %, thus the films are transparent in the visible region. The optical band gap value of the CdO films increased from 2.24 to 2.34 eV with increase in the substrate temperature from 200 to 350°C. Surface morphology studies reveal that the grain size and roughness of the films are increased with increase in the substrate temperature. The minimum value of electrical resistivity of the films is 1.40 9 10 -3 X cm obtained at 350°C. The maximum ethanol sensitivity of 33.45 % is observed for the substrate temperature of 300°C. Thus the results authenticate that the substrate temperature influences the structural, optical, electrical and sensing properties of the deposited films.
“…It is a direct band gap material and one of the most useful semiconductor materials with its wide range of applications in semiconductor devices such as fabrication of solar cells as optical windows [2], piezo-electronic and optoelectronic [3] devices such as thin film optical integrated circuits. CdS thin films are also useful in electronic devices such as field effect transistor [2], light emitting diodes [4]. In the case of thin film solar cells, it has been reported that efficient thin film solar cells are obtained using CdS as an n-partner.…”
Abstract:A prepared single solid source precursor was used for the deposition of copper doped oxy-sulphide thin films on glass substrate by MOCVD technique. This was achieved by the pyrolysis of the prepared precursors at 420°C with a flow rate of 2.5 dm 3 /min for 2 hours. The deposited films were characterized using Rutherford Backscattering Spectroscopy (RBS), Scanning Electron Microscopy (SEM), UV-visible spectrophotometry and four point probe method. RBS analysis showed that the expected elements are present while the thickness was estimated to be 889 nm. The SEM images of the deposited film showed a fine structure with densely packed grains of uniform grain size of about 80 nm, well distributed throughout the entire substrate which is polycrystalline in nature. The film revealed an average transmittance of 80% in the visible region with a direct bandgap of 2.41 eV. The absorbance of the film was observed to be low in the visible and near-infrared regions, and high in UV region. The values of 1. 17 × 10 Ω/□ and 10.40 Ω were obtained as the sheet resistance and resistivity of the film respectively. The deposited quaternary thin film is found to be a promising candidate as window layer and absorber layer for cost effective photovoltaics.
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