Abstract:Transparent conducting CdO thin films were deposited on to glass substrates by spray pyrolysis technique. The depositions were carried out at different substrate temperatures with varying film thickness. The effects of substrate temperature on structural, optical and electrical properties of CdO thin films were systematically studied. The CdO films were polycrystalline in nature with cubic crystal structure showing preferential orientation along (111) direction. Wettability results confirmed that the hydrophob… Show more
“…The negative sign of Hall coefficients for all CdO:In 2 O 3 thin films confirmed the n-type nature conductivity of this system. This is caused due to the existence of defects such as oxygen vacancies and/or intrinsic interstitial cadmium atoms, which can be easily ionized [42,43]. The induced electrons from this process contribute to the conduction of electricity, causing CdO to act as an n-type semiconductor.…”
Polycrystalline CdO:In 2 O 3 thin films for gas sensor applications were prepared on glass and silicon substrates by using one-step spray pyrolysis technique from the aqueous solution of CdCl 2 and InCl 3 at a substrate temperature of 300 °C. The structure, surface morphology, and the optoelectronic properties of prepared films were characterized respectively by means of X-ray diffraction (XRD), atomic force microscope and UV-visible spectroscopy. Based on the XRD results, the polycrystalline nature of CdO films has been confirmed, and In 2 O 3 films were found to exhibit a preferred orientation along (222) diffracted plane. The grain size varies between 9.0 and 28.4 nm. The results of Hall effect measurement of CdO:In 2 O 3 thin films confirms that all films were an n-type semiconductor. The electrical properties of prepared thin films and their sensitivity to nitrogen dioxide (NO 2) gas are also studied. The influence of the operating temperature and In 2 O 3 concentration on the NO 2 response were investigated. It is found that all films are sensitive to NO 2 gas, and the ideal operating temperature for the film contented 20 vol% of In 2 O 3 was found to be 200 °C at a gas concentration of 25 ppm. The sensing mechanism of the CdO:In 2 O 3 thin film is discussed and attributed to electron transfer between the sensing element and NO 2 molecules.
“…The negative sign of Hall coefficients for all CdO:In 2 O 3 thin films confirmed the n-type nature conductivity of this system. This is caused due to the existence of defects such as oxygen vacancies and/or intrinsic interstitial cadmium atoms, which can be easily ionized [42,43]. The induced electrons from this process contribute to the conduction of electricity, causing CdO to act as an n-type semiconductor.…”
Polycrystalline CdO:In 2 O 3 thin films for gas sensor applications were prepared on glass and silicon substrates by using one-step spray pyrolysis technique from the aqueous solution of CdCl 2 and InCl 3 at a substrate temperature of 300 °C. The structure, surface morphology, and the optoelectronic properties of prepared films were characterized respectively by means of X-ray diffraction (XRD), atomic force microscope and UV-visible spectroscopy. Based on the XRD results, the polycrystalline nature of CdO films has been confirmed, and In 2 O 3 films were found to exhibit a preferred orientation along (222) diffracted plane. The grain size varies between 9.0 and 28.4 nm. The results of Hall effect measurement of CdO:In 2 O 3 thin films confirms that all films were an n-type semiconductor. The electrical properties of prepared thin films and their sensitivity to nitrogen dioxide (NO 2) gas are also studied. The influence of the operating temperature and In 2 O 3 concentration on the NO 2 response were investigated. It is found that all films are sensitive to NO 2 gas, and the ideal operating temperature for the film contented 20 vol% of In 2 O 3 was found to be 200 °C at a gas concentration of 25 ppm. The sensing mechanism of the CdO:In 2 O 3 thin film is discussed and attributed to electron transfer between the sensing element and NO 2 molecules.
“…The most common application of ethanol sensors is as a breath analyser, since the ethanol vapour in human breath is correlated with the concentration in the blood. Recently, gas sensors based on the semiconducting metal-oxides such as SnO 2 , ZnO, CdO, ITO, WO 3 , and CuO have been found to be very useful for detecting ethanol vapour [1][2][3][4][5][6][7][8][9]. It was found that cadmium oxide based thin films having high sensitivity to ethanol gas because of very thin discontinuous layer surface of CdO films can remarkably enhance its gas-sensing characteristics [10,11].…”
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