2020
DOI: 10.1051/epjconf/202023807004
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A new route for high quality nanometric films of inorganic halide perovskites

Abstract: Successful deposition of CsPbX3 (X = Br, Cl) thin films (50-500 nm) on several kind of substrates has been realized by Radio-Frequency Magnetron Sputtering. The technique allows for high homogeneity of the samples on large areas (several cm2) not only in terms of morphology but also referring to the optical properties. In particular, high resolution (in space, spectrum and time) photoluminescence studies in a wide temperature range (10-300 K) reveal that the low inhomogeneous broadening comes from a submicron … Show more

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Cited by 2 publications
(3 citation statements)
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“…SEM analyses reported in [20] evidences a film morphology characterized by a continuous network of several tens of nanometer size crystals with a random distribution of bigger crystals with typical micrometer/sub-micrometer size. I-V characteristics performed with samples of different thickness on glass substrates, from 100 nm to 1.5 μm indicate a good homogeneity of the semiconductor material independently of the deposition time [21]. Thermally stimulated currents after exposure with a 365 nm LED priming measured from room temperature up to 370 K showed no evidence of trapping effects due to intragap states on the electrical transport properties at room temperature of the films.…”
Section: Methodsmentioning
confidence: 87%
See 1 more Smart Citation
“…SEM analyses reported in [20] evidences a film morphology characterized by a continuous network of several tens of nanometer size crystals with a random distribution of bigger crystals with typical micrometer/sub-micrometer size. I-V characteristics performed with samples of different thickness on glass substrates, from 100 nm to 1.5 μm indicate a good homogeneity of the semiconductor material independently of the deposition time [21]. Thermally stimulated currents after exposure with a 365 nm LED priming measured from room temperature up to 370 K showed no evidence of trapping effects due to intragap states on the electrical transport properties at room temperature of the films.…”
Section: Methodsmentioning
confidence: 87%
“…Cesium lead chloride (CsPbCl 3 ) films have been grown by Radio Frequency (RF) magnetron sputtering on plastic substrates equipped with an array of Cu electrodes using a Korvus HEX (Korvus Technology Ltd.) sputter equipped with an RF source working at 13.56 MHz [18][19][20]. The precursor salts (CsCl and PbCl 2 ) are grinded in equal molar ratio in a mixer mill (Retsch model MM400) to produce the powder used to manufacture the sputtering target: a 5 cm diameter disk realized by pressing the perovskite powder by means of a pneumatic press (11.5 MPa working pressure) for 24 h at 150 °C [21]. The deposition is carried out at room temperature with 20 W RF power and with a 20 sccm argon gas flow.…”
Section: Methodsmentioning
confidence: 99%
“…Cesium lead chloride (CsPbCl 3 ) films have been deposited by Radio Frequency (RF) magnetron sputtering on plastic substrates equipped with an array of Cu electrodes [15] , [16] , [17] . The mechanochemical procedure described in [18] has been used to obtain the CsPbCl 3 powder.…”
Section: Methodsmentioning
confidence: 99%