A New Model of Anomalous Phosphorus Diffusion in Silicon

Budil, M.; Pötzl, H.; Stingeder, Gerhard; Grasserbauer, M.; Goser, K.

doi:10.4028/www.scientific.net/msf.38-41.719

Cited by 13 publications

(4 citation statements)

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“…Adding all contributions of the various charge states to the diffusion current results in a diffusion equation for the total concentration with Fermi-level dependent effective diffusion coefficient and Fermi-level dependent effective mobility. 17 Our experiments as well as nearly all other experiments on the diffusion of platinum or gold in silicon were carried out in samples in which the dopant concentrations were always significantly below the respective intrinsic charge carrier concentration. Under such intrinsic conditions, the Fermi level is always fixed at the intrinsic level so that the electrostatic potential vanishes.…”

Section: Theorymentioning

confidence: 98%

Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments

Jacob

Pichler

Ryssel

et al. 1997

Journal of Applied Physics

107

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Diffusion of platinum at low temperatures is a convenient way to characterize vacancy profiles in silicon. This article summarizes the experiments performed to find a standard procedure, discusses the pitfalls and limitations, and shows the applicability of the method. The results of experiments with FZ and CZ samples in the temperature range from 680 deg C to 842 deg C were found to disagree with the predictions of models published in the literature. Therefore, parameters governing the diffusion of point defects and platinum in silicon were determined for this temperature range

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Section: Theorymentioning

confidence: 98%

Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments

Jacob

Pichler

Ryssel

et al. 1997

Journal of Applied Physics

107

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“…Each species can change its charge state by reaction with an electron (-e) or a hole (+e) X ~ --+ e r X i-+~ [4] Assuming that these reactions are in equilibrium, we can express the concentration of the charged species in dependence of the neutral ones c~ = K~ \n,/ ,~x [5] where the K~ represent the equilibrium constants. Please notice here that the equilibrium constant for the neutral species is always unity (Kx ~ = 1).…”

Section: Modelmentioning

confidence: 99%

Simulation of Phosphorus Diffusion in Silicon Using a Pair Diffusion Model with a Reduced Number of Parameters

Ghaderi

Hobler

1995

J. Electrochem. Soc.

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In this work, we describe a general model for dopant diffusion via dopant-defect pairs containing all possible charge states of species under the assumption of local equilibrium for electronic processes, but not for chemical processes. We present a method by which the unknown parameters can be reduced efficiently. With the aid of this method all the backward reaction rate coefficients can be replaced by the forward reaction rate coefficients and two new parameters. Introducing the intrinsic diffusion coefficient, one of the two new parameters can be replaced, too. Thus, we have only one constant parameter instead of all backward reaction rate coefficients, and additionally the model automatically yields the correct results in the intrinsic case. In our model we use the barrier energy for the Frenkel pair mechanism and the point defect parameters which we have determined from gold diffusion experiments previously. We present several simulations of phosphorus diffusion and compare the results with experiments published in the literature. Very good agreement between simulations and experiments has been obtained. As a result we suggest a complete set of parameters for phosphorus diffusion in silicon for the temperature range from 900 to 1200~

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“…Moreover, the number of unknown parameters increases rapidly with the number of considered charge state of the defects in these models. Budil [11], has defined the total concentration for each species as the sum of the concentrations of charged species and the neutral one. Assuming local equilibrium for electronic processes, he derived a pair diffusion model with only on equation per species, considering all possible charge and average diffusivities.…”

Section: Introductionmentioning

confidence: 99%

The simple approach to determination of active diffused phosphorus density in silicon

Sasani¹

2004

Semicond. Phys. Quantum Electron. Optoelectron.

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The diffusion of Phosphorus in silicon using a POCl 3 source has been considered. In the base of Fair-Tsai model of P-diffusion an empirical equation for calculation of active diffused phosphorus density (Q el ), is proposed. In this equation, a relationship between (Q el ), diffusion time, temperature and junction depth of P-diffused layer (X j ), is presented. The value of sheet resistance (R s ), which is taken from theoretical determination at 900°C, has a good agreement with experimental result.

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A New Model of Anomalous Phosphorus Diffusion in Silicon

Cited by 13 publications

References 0 publications

Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments

Determination of vacancy concentrations in the bulk of silicon wafers by platinum diffusion experiments

Simulation of Phosphorus Diffusion in Silicon Using a Pair Diffusion Model with a Reduced Number of Parameters

The simple approach to determination of active diffused phosphorus density in silicon

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