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New experiments on short-time diffusion of gold in silicon are presented. By means of both our experiments and experiments published elsewhere, diffusion of gold in silicon is investigated in the temperature range of 900 °C to 1100 °C. A complete set of parameters is determined from these experiments using Arrhenius’ law. It is found that the short-time diffusion experiments cannot be simulated without barrier energies for both the gold-point defect reactions and the Frenkel pair reaction. Their values have been determined as EAu/I=0.482 eV, EAuI/V=0.971 eV, and EI/V=0.30 eV.

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The paper is concerned with the experimental and theoretical determination of a distribution function of antimony precipitates in highly antimony‐doped silicon. The distribution function yields the number of precipitates for any given particle size. In order to obtain the experimental distribution function, electron microscopical exposures of antimony precipitates are used. For the theoretical calculations, an extended literature model is employed. A reasonable agreement of experiment and theory is demonstrated.

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