A new method for on wafer noise measurement

Dambrine, G.; Happy, H.; Danneville, F.; Cappy, A.

doi:10.1109/22.223734

Cited by 110 publications

(66 citation statements)

References 18 publications

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“…Finally, a first order fitting is used for obtaining a smoother F 50 as a function of the square of the frequency (see Fig. 2) [4,6,8,10]. Fig.…”

Section: Measurements and Model Validationmentioning

confidence: 99%

“…Consequently, several studies have been addressed to overcome these drawbacks by extracting the noise parameters from the measurements of the NF 50 , which represents the noise figure with a 50 X source impedance, without the need of any tuner [4][5][6][7][8]. In particular, the determination of the noise parameters has been simplified by exploiting the noise model based on expanding the small signal equivalent circuit with two equivalent noise temperatures, which are associated to the intrinsic input and output resistances [5,9].…”

Section: Introductionmentioning

confidence: 99%

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Microwave noise modeling of FinFETs

Crupi

Caddemi

Schreurs

et al. 2011

Solid-State Electronics

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“…Finally, a first order fitting is used for obtaining a smoother F 50 as a function of the square of the frequency (see Fig. 2) [4,6,8,10]. Fig.…”

Section: Measurements and Model Validationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Microwave noise modeling of FinFETs

Crupi

Caddemi

Schreurs

et al. 2011

Solid-State Electronics

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“…More specifically, the noise characterization of microwave transistors is based on a set of time consuming measurement procedures performed with very expensive instrumentation [1]. Alternatively, a mixed approach can be used to derive the noise parameters by computer-aided analysis of a circuit model having noisy elements as it can be extracted from the scattering parameters and a reduced set of noise figure measurements [1,2]. In the present work we develop a neural network structure to compute the microwave noise parameters of High Electron Mobility Transistor (HEMT) [3,4] without the need of any circuit model extraction and parameter computation by CAD tools.…”

Section: Introductionmentioning

confidence: 99%

Simulating Noise Performance of Advanced Devices down to Cryogenic Temperatures

Caddemi¹

2005

AIP Conference Proceedings

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The aim of the present work is the development of a suitable neural network structure to compute the microwave noise parameters of High Electron Mobility Transistors (HEMT). The noise parameters (NP) here considered are the magnitude (|Γ opt |) and phase (∠Γ opt ) of the optimum noise source reflection coefficient, the minimum noise figure (F min ) and the noise resistance (R n ). By this procedure, we are able to reproduce the above noise parameters of several device types from only one measured scattering parameter set, one frequency point and one generic noise figure value at different bias and/or temperature conditions. The employed noise figure is that measured in input matched conditions (i.e. 50 Ω source impedance), namely F 50 . The trained network outputs were compared with data of noise measurements performed in our lab and the results have shown to be in a very good agreement. We observed that the difference occurring between the expected value of the noise parameters and the value calculated by the neural network is negligible. The procedure here presented is the most effective choice to avoid the need of any circuit simulations. Our neural network allows great time saving, thus leading to a rapid and complete characterization of the active microwave device under test with a remarkable generalization feature.

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“…(29) In the end, the four noise parameters can be modeled from the noise power spectral density [37].…”

Section: Correlation Between Drain-current Noise and Gate-current Noisementioning

confidence: 99%

A Small-Signal Analysis Based Thermal Noise Modeling Method for Rf Soi Mosfets

Xiang¹,

Huang²,

Liu³

et al. 2017

PIER M

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Abstract-We investigate thermal noise mechanisms and present analytical expressions of the noise power spectral density at high frequencies (HF) in Silicon-on-insulator (SOI) MOSFETs. The developed HF noise model of RF T-gate body contact (TB) SOI MOSFET for 0.13-µm SOI CMOS technology accounts for the mechanisms of 1) channel thermal noise; 2) induced gate noise; 3) substrate resistance noise and 4) gate resistance thermal noise. The extraction method of modeling parameter utilized by Y -parameter analysis on the proposed small-signal equivalent circuit is demonstrated in this paper. Excellent agreement between simulated and measured noise data is obtained at different temperatures.

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A new method for on wafer noise measurement

Cited by 110 publications

References 18 publications

Microwave noise modeling of FinFETs

Microwave noise modeling of FinFETs

Simulating Noise Performance of Advanced Devices down to Cryogenic Temperatures

A Small-Signal Analysis Based Thermal Noise Modeling Method for Rf Soi Mosfets

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