A New Metal Control Gate Last process (MCGL process) for high performance DC-SF (Dual Control gate with Surrounding Floating gate) 3D NAND flash memory

Noh, Yoohyun; Ahn, Youngsoo; Yoo, Hyunseung; Han, Byeongho; Chung, Sung‐Jae; Shim, Keonsoo; Lee, Keun-Woo; Kwak, Sanghyon; Shin, Sung‐Chul; Choi, Iksoo; Nam, Sanghyuk; Cho, Gyu-Seog; Sheen, Dongsun; Pyi, Seung-Ho; Choi, Jongmoo; Park, Sung-Kye; Kim, Jinwoong; Lee, Seokkiu; Aritome, S.; Hong, Sung-Joo; Park, Sungwook

doi:10.1109/vlsit.2012.6242440

Cited by 17 publications

(7 citation statements)

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“…Such a device was shown to exhibit superior performance with respect to a conventional vertical nanowire transistor, because of the high defectivity in the central region that plagued the performance of the latter structure. The gate stack of today's 3D NAND can be based on either a floating gate [23,[287][288][289][290][291], similar to planar NAND devices, or a charge-trap stack similar to an oxide/nitride/oxide (ONO) layer, where the charge is stored in traps within the nitride layer [10,11,22,292].…”

Section: D Nand Reliabilitymentioning

confidence: 99%

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

2017

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Abstract:We review the state-of-the-art in the understanding of planar NAND Flash memory reliability and discuss how the recent move to three-dimensional (3D) devices has affected this field. Particular emphasis is placed on mechanisms developing along the lifetime of the memory array, as opposed to time-zero or technological issues, and the viewpoint is focused on the understanding of the root causes. The impressive amount of published work demonstrates that Flash reliability is a complex yet well-understood field, where nonetheless tighter and tighter constraints are set by device scaling. Three-dimensional NAND have offset the traditional scaling scenario, leading to an improvement in performance and reliability while raising new issues to be dealt with, determined by the newer and more complex cell and array architectures as well as operation modes. A thorough understanding of the complex phenomena involved in the operation and reliability of NAND cells remains vital for the development of future technology nodes.

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Section: D Nand Reliabilitymentioning

confidence: 99%

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

2017

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“…Critical parameters for the FG cell operation are the coupling ratio between the CG and FG and FG-FG coupling. Complex structures have been proposed in order to optimize such issues [24].…”

Section: The Floating-gate Cell Architecturesmentioning

confidence: 99%

3D NAND Flash Based on Planar Cells

Silvagni¹

2017

Computers

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Abstract:In this article, the transition from 2D NAND to 3D NAND is first addressed, and the various 3D NAND architectures are compared. The article carries out a comparison of 3D NAND architectures that are based on a "punch-and-plug" process-with gate-all-around (GAA) cell devices-against architectures that are based on planar cell devices. The differences and similarities between the two classes of architectures are highlighted. The differences between architectures using floating-gate (FG) and charge-trap (CT) devices are also considered. Although the current production of 3D NAND is based on GAA cell devices, it is suggested that architectures with planar cell devices could also be viable for mass production.

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“…Another key advantage of DC-SF is the absence of FG-FG interference as the Control Gate sitting between 2 Floating Gates plays the role of electrostatic shield. As a result, this memory cells allows wide Program/Erase (P/E) threshold voltage window, which is key for multilevel storage [7]. Cross sections in Fig.…”

Section: Dual Control-gate With Surrounding Floating Gate (Dc-sf) Flamentioning

confidence: 99%

3D Floating Gate NAND Flash Memories

Micheloni

Crippa

2016

3D Flash Memories

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A New Metal Control Gate Last process (MCGL process) for high performance DC-SF (Dual Control gate with Surrounding Floating gate) 3D NAND flash memory

Cited by 17 publications

References 0 publications

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

Reliability of NAND Flash Memories: Planar Cells and Emerging Issues in 3D Devices

3D NAND Flash Based on Planar Cells

3D Floating Gate NAND Flash Memories

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