2013
DOI: 10.1016/j.microrel.2012.10.013
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A new MagFET-based integrated current sensor highly immune to EMI

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Cited by 19 publications
(15 citation statements)
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“…In particular, the TEM cell tests highlighted how the operations of the specific Hall-effect sensor considered in this study are affected by an RF electric field excitation parallel to the surface of the sensing element. As the physical mechanism of the Hall-effect is not affected by a CW RFI [7], the failures of the Hall sensor are likely related to the ICs that interface the Hall sensor and process its signal. Although many investigations are present in the literature regarding amplifier and monitoring ICs [20][21][22], a precise understanding of the Hall sensor failure causes always relies on a complete knowledge of the ICs that interface with the Hall plates.…”
Section: Discussionmentioning
confidence: 99%
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“…In particular, the TEM cell tests highlighted how the operations of the specific Hall-effect sensor considered in this study are affected by an RF electric field excitation parallel to the surface of the sensing element. As the physical mechanism of the Hall-effect is not affected by a CW RFI [7], the failures of the Hall sensor are likely related to the ICs that interface the Hall sensor and process its signal. Although many investigations are present in the literature regarding amplifier and monitoring ICs [20][21][22], a precise understanding of the Hall sensor failure causes always relies on a complete knowledge of the ICs that interface with the Hall plates.…”
Section: Discussionmentioning
confidence: 99%
“…This allows keeping the power circuit current flows to be monitored electrically isolated from the sensor [6]. On this basis, Hall-effect sensors are not affected by conducted interference generated by the power system to be monitored [7][8][9][10] and are therefore particularly employed in electromagnetically-polluted environments.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, the susceptibility to electromagnetic interference (EMI) of smart power electronics and its on-board monitoring and control functions (i.e., thermal shutdown, current sensors and overvoltage protection) has to be considered. This to prevent malfunctions and guarantee the correct/expected functioning of the electronic system in any operating conditions [1][2][3][4][5][6].…”
Section: Introductionmentioning
confidence: 99%
“…The sensitivity of a galvanic current sensor to the magnetic field depends on the carrier mobility, hall factor and its geometry [3] [4]. In this context, inherent polarization in GaN gives rise to a high density 2DEG even without the application of an external bias.…”
Section: Introductionmentioning
confidence: 99%