A New Holistic Model of 2-D Semiconductor FETs

Marín, Enrique G.; Bader, Samuel James; Jena, Debdeep

doi:10.1109/ted.2018.2797172

Cited by 36 publications

(41 citation statements)

References 18 publications

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“…Our aim is to develop an accurate and physics-based compact model of the terminal charges and corresponding intrinsic capacitances of four-terminal (4T) 2DFETs valid for all operation regimes. In doing so, we present such a model together with the drain current equation, developed by some of us, 12 based on drift-diffusion theory where the surface potential is the key magnitude of the model. So that, the combination of both approaches gives rise to a compact largesignal model suitable for commercial TCAD tools employed in the simulation of circuits based on 2DFETs.…”

Section: Introductionmentioning

confidence: 99%

Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances

et al. 2019

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We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor-based field-effect transistors, which provides explicit expressions for the drain current, terminal charges, and intrinsic capacitances. The drain current model is based on the drift-diffusion mechanism for the carrier transport and considers Fermi-Dirac statistics coupled with an appropriate field-effect approach. The terminal charge and intrinsic capacitance models are calculated adopting a Ward-Dutton linear charge partition scheme that guarantees charge conservation. It has been implemented in Verilog-A to make it compatible with standard circuit simulators. In order to benchmark the proposed modeling framework we also present experimental DC and high-frequency measurements of a purposely fabricated monolayer MoS 2 -FET showing excellent agreement between the model and the experiment and thus demonstrating the capabilities of the combined approach to predict the performance of 2DFETs.npj 2D Materials and Applications (2019) 3:47 ; https://doi.

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Section: Introductionmentioning

confidence: 99%

Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances

et al. 2019

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“…SPICE models are an integral part of EDA tools to estimate the performance of a circuit before its large-scale production. Recently, significant efforts have been made in developing a compact model for TMD material based FETs to estimate the circuit performance based on these devices [23]- [28]. The model presented in [23] has formulated the electrostatics from an equivalent lumped capacitive network and only includes drift component of drain current.…”

Section: Introductionmentioning

confidence: 99%

Compact Modeling of Multi-Layered MoS₂ FETs Including Negative Capacitance Effect

Nandan

Yadav

Rastogi

et al. 2020

IEEE J. Electron Devices Soc.

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In this paper, we present a channel thickness dependent analytical model for MoS2 symmetric double-gate FETs including negative capacitance (NC) effect. In the model development, first thickness dependent model of the baseline 2D FET is developed, and later NC effect is included in the model using the Landau-Khalatnikov (L-K) relation. To validate baseline model behavior, density functional theory (DFT) calculations are taken into account to obtain numerical data for the K and Λ valley dependent effective masses and differences in the energy levels of N-layer (N = 1, 2, 3, 4, and 5) MoS2. The calculated layer dependent parameters using DFT theory are further used in a drift-diffusion simulator to obtain electric characteristics of the baseline 2D FET for model validation. The model shows excellent match for drain current and total gate capacitance of baseline FET and NCFET against the numerical simulation.

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“…It is noteworthy that unlike conventional MOSFETs (Metal Oxide Semiconductor Field Effect Transistors), in this device, the gate electrostatics is dictated by the effects of dipole-dipole interactions, [20][21][22] prevailing at the interfaces of a typical vdWH. Thus, modeling methodologies reported earlier for 2D-semiconductor FETs [23][24][25] are not applicable here. Apart from this, the band-gap opening in graphene due to vdW interactions poses additional complexity to the device physics.…”

Section: Introductionmentioning

confidence: 99%

An atom-to-circuit modeling approach to all-2D metal–insulator–semiconductor field-effect transistors

Das

Mahapatra

2018

npj 2D Mater Appl

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Vertical stacking of heterogeneous two-dimensional (2D) materials has received considerable attention for nanoelectronic applications. In the semiconductor industry, however, the process of integration for any new material is expensive and complex. Thus, first principles-based models that enable systematic performance evaluation of emerging 2D materials at device and circuit level are in great demand. Here, we propose an 'atom-to-circuit' modeling framework for all-2D MISFET (metal-insulator-semiconductor field-effect transistor), which has recently been conceived by vertically stacking semiconducting transition metal dichalcogenide (e.g., MoS 2 ), insulating hexagonal boron nitride and semi-metallic graphene. In a multi-scale modeling approach, we start with the development of a first principles-based atomistic model to study fundamental electronic properties and charge transfer at the atomic level. The energy band-structure obtained is then used to develop a physics-based compact device model to assess transistor characteristics. Finally, the models are implemented in a circuit simulator to facilitate design and simulation of integrated circuits. Since the proposed modeling framework translates atomic level phenomena (e.g., band-gap opening in graphene or introduction of semiconductor doping) to a circuit performance metric (e.g., frequency of a ring oscillator), it may provide solutions for the application and optimization of new materials.

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A New Holistic Model of 2-D Semiconductor FETs

Cited by 36 publications

References 18 publications

Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances

Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances

Compact Modeling of Multi-Layered MoS₂ FETs Including Negative Capacitance Effect

An atom-to-circuit modeling approach to all-2D metal–insulator–semiconductor field-effect transistors

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A New Holistic Model of 2-D Semiconductor FETs

Cited by 36 publications

References 18 publications

Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances

Large-signal model of 2DFETs: compact modeling of terminal charges and intrinsic capacitances

Compact Modeling of Multi-Layered MoS2 FETs Including Negative Capacitance Effect

An atom-to-circuit modeling approach to all-2D metal–insulator–semiconductor field-effect transistors

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Compact Modeling of Multi-Layered MoS₂ FETs Including Negative Capacitance Effect