An atom-to-circuit modeling approach to all-2D metal–insulator–semiconductor field-effect transistors

Abstract

Vertical stacking of heterogeneous two-dimensional (2D) materials has received considerable attention for nanoelectronic applications. In the semiconductor industry, however, the process of integration for any new material is expensive and complex. Thus, first principles-based models that enable systematic performance evaluation of emerging 2D materials at device and circuit level are in great demand. Here, we propose an 'atom-to-circuit' modeling framework for all-2D MISFET (metal-insulator-semiconductor field-effect transistor), which has recently been conceived by vertically stacking semiconducting transition metal dichalcogenide (e.g., MoS 2 ), insulating hexagonal boron nitride and semi-metallic graphene. In a multi-scale modeling approach, we start with the development of a first principles-based atomistic model to study fundamental electronic properties and charge transfer at the atomic level. The energy band-structure obtained is then used to develop a physics-based compact device model to assess transistor characteristics. Finally, the models are implemented in a circuit simulator to facilitate design and simulation of integrated circuits. Since the proposed modeling framework translates atomic level phenomena (e.g., band-gap opening in graphene or introduction of semiconductor doping) to a circuit performance metric (e.g., frequency of a ring oscillator), it may provide solutions for the application and optimization of new materials.

Monolayer and bilayer graphene field effect transistor using Verilog-A

“…The methodology followed for drain current modeling is shown in Figure 1. The steps followed are extraction of parameters using atomistic modeling [21] using MATLAB and then device modeling is performed using carrier transport mechanisms. Finally drain current model for monolayer and bilayer is developed and implemented in Verilog-A of cadence.…”

Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer

“…A pn-junction diode of MBT-ML (Fig. 2a) is first constructed by using the method of electrostatic doping with p-and n-type atomic compensation charges 42 , which has been used for various nanodevices modeling 39,[43][44][45] . According to the atomic lattice structures (Fig.…”

“…for various nanodevices modeling. 39,[43][44][45] According to the atomic lattice structures (Fig. 1a), there exist two types of MBT-ML diode structures, i.e., Z-type (along the x axis, zigzag at edges) and A-type (along the y axis, armchair along the edges).…”

Lanthanum Oxyhalide Monolayers: An Exceptional Dielectric Companion to 2-D Semiconductors

“…T HE 2-D materials represent an emerging platform for the exploration of next-generation solid-state device technology beyond the "silicon era" [1], [2], [3]. The everexpanding 2-D family, with over 4000 species predicted to date [4], [5], covers almost the entire spectrum of technologically important solid-states phases, including dielectric, semiconductor, semimetal, metal, and superconductors, as well as exotic condensed matter phases, such as topological insulator (TI), Dirac semimetal [6], Mott insulator [7], hourglass semimetal [8], and so on.…”