Abstract:A new green synthesis method of CuInS₂ and CuInSe₂ nanoparticles and their integration into thin filmsAbstract A new preparation method for CuInS 2 and CuInSe 2 nanoparticles synthesis is described without using any organic solvent. Heating Cu, In, and S/Se precursors dissolved in water for 30 min in a microwave oven in the presence of mercapto-acetic acid leads to monodispersed chalcopyrite nanoparticles. No precipitation of these nanoparticles is observed after several months at room temperature. These new m… Show more
“…Currently, a variety of synthetic methods are available for the synthesis of mixed Group 11/13 ternary chalcogenide nanoparticles including hydrothermal, solvothermal, hot injection, solution decomposition, and microwave irradiation . This latter method has attracted particular attention because of improvements in reaction times, purity, and reproducibility .…”
Heterobimetallic Group 11/13 sulfide nanoparticles (AgInS2, CuInS2, Ag9GaS6, and CuGaS2) are formed by treatment of [M(S2CAr)3] (M=Ga or In) with either AgNO3 or CuCl under mild conditions. The intermediary gallium or indium tris(aryldithioate) complexes are easily prepared by stirring the appropriate metal and aryldithioc acid at room temperature. Overall, this two‐step process is a simple solution‐based method for transforming Ga and In metal into valuable ternary metallosulfide nanoparticles at relatively low temperatures.
“…Currently, a variety of synthetic methods are available for the synthesis of mixed Group 11/13 ternary chalcogenide nanoparticles including hydrothermal, solvothermal, hot injection, solution decomposition, and microwave irradiation . This latter method has attracted particular attention because of improvements in reaction times, purity, and reproducibility .…”
Heterobimetallic Group 11/13 sulfide nanoparticles (AgInS2, CuInS2, Ag9GaS6, and CuGaS2) are formed by treatment of [M(S2CAr)3] (M=Ga or In) with either AgNO3 or CuCl under mild conditions. The intermediary gallium or indium tris(aryldithioate) complexes are easily prepared by stirring the appropriate metal and aryldithioc acid at room temperature. Overall, this two‐step process is a simple solution‐based method for transforming Ga and In metal into valuable ternary metallosulfide nanoparticles at relatively low temperatures.
“…The compound semiconductors, particularly CuInX 2 (X = S, Se) have several desirable features as absorbers in thin film solar cells due to their direct band gap (*1.05 eV), high absorption coefficient and good radiation stability [1][2][3][4], making them a promising material for solar cell applications. There are several diversified techniques to fabricate CuInSe 2 (CIS) such as evaporation [5][6][7], sputtering [8][9][10], spray pyrolysis [11,12], chemical method etc. [13][14][15][16][17].…”
This work presents growth and characterization of copper indium diselenide (CuInSe 2 ) nanoparticles with controllable size synthesized by a simple solvothermal process. Salts of copper(I), indium(III) and selenium powder have been used as starting precursors and ethylenediamine is used as a solvent. Nanoparticles synthesized at different temperatures have been analyzed using X-ray diffraction and transmission electron microscopy. Particle size has been calculated by dynamic light scattering. Surface morphology has also been studied by scanning electron microscopy. Optical properties of CuInSe 2 provide band gap in the range of 0.94-1.05 eV, which are nearly close to optimal intensity for solar radiation suitable for solar cell devices.
“…Recently, synthesis of nanoparticles based on microwave heating is found to be a good technique because of its various advantages, such as shorter reaction time, low level of impurities, high crystallinity, excellent reproducibility, and high yield of product. Bensebaa et al [8] used a microwave synthesis approach to prepare CIS nanoparticles. However, the use of highly toxic Na 2 Se (selenium source) chemicals makes this process incompatible to fabricate CIS absorber layer.…”
Highly crystalline CIS nanoink was synthesized using highly efficient microwave route. Thin films of CIS were fabricated using the developed ink by drop casting method. XRD pattern of CIS thin films indicates that a chalcopyrite phase with good crystallinity can be obtained using developed ink and that the composition of precursor ink can be transferred directly to the thin film without change in the stoichiometry. The developed ink alleviates the need of organic binders/dispersant and high temperature selenization using highly toxic H 2 Se gas (or Na 2 Se as a Se source) after deposition of thin film absorber layer. UV-VIS-NIR absorption analysis indicates that CIS thin film has a band gap of around 1.18 eV.
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