Silver bismuth iodides are non-toxic and comparatively cheap photovoltaic materials, but their wide bandgaps and downshifted valence band edges limit their This article is protected by copyright. All rights reserved. performance as light absorbers in solar cells. Herein, we introduce a strategy to tune the optoelectronic properties of silver bismuth iodides by partial anionic substitution with the sulfide dianion. A consistent narrowing of the bandgap by 0.1 eV and an upshift of the valence band edge by 0.1-0.3 eV upon modification with sulfide are demonstrated for AgBiI 4 , Ag 2 BiI 5 , Ag 3 BiI 6 and AgBi 2 I 7 compositions. Solar cells based on silver bismuth sulfoiodides embedded into a mesoporous TiO 2 electron transporting scaffold, and a poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] hole transporting layer significantly outperform devices based on sulfide-free materials, mainly due to enhancements in the photocurrent by up to 48 %. A power conversion efficiency of 5.44 ± 0.07 % (J sc = 14.6 ± 0.1 mA cm -2 ; V oc = 569 ± 3 mV; fill factor = 65.7 ± 0.3 %) under 1 sun irradiation and stability under ambient conditions for over a month are demonstrated. The results reported herein indicate that further improvements should be possible with this new class of photovoltaic materials upon advances in the synthesis procedures and an increase in the level of sulfide anionic substitution.
Light harvesting capacity of caesium silver bismuth bromide double perovskite need to be enhanced to render this non-toxic and thermodynamically stable material suitable for photovoltaic applications, for example as a top layer in tandem solar cells.
Spray-deposited AgBiS2 films are introduced as light-harvesters in planar solar cells that demonstrate up to 18 mA cm−2 short-circuit current density under 1 sun irradiation.
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