A new FDSOI spin qubit platform with 40nm effective control pitch

Abstract

Operating Si quantum dot (QD) arrays requires homogeneous and ultra-dense structures with aggressive gate pitch. Such a density is necessary to separately control the QDs chemical potential (i.e. charge occupation of each QD) from the exchange interaction (i.e. tunnel barriers between each QD). We present here a novel Si quantum device integration that halves the effective gate pitch and provides full controllability in 1D FDSOI QD arrays. The major advantages of this architecture are explored through numerical simulations. Functionality of the fabricated structure is validated via 300K statistical electrical characterization, while tunnel-coupling control is demonstrated at cryogenic temperature.

Superconducting routing platform for large-scale integration of quantum technologies

“…By bringing the qubit arrays and cryo-CMOS control chips together, this demonstrator aims at making a first step toward scaling up. As silicon-based spin qubits appear as the most promising solution for large scale integration, our efforts with this demonstrator focus on this technology [15,16], but hybridization of other semiconductor quantum circuits, made from e.g. GaAs, can be envisioned as testbeds for proof of concepts.…”