A new extrapolation law for data-retention time-to-failure of nonvolatile memories

Salvo, B. De; Ghibaudo, G.; Pananakakis, G.; Guillaumot, B.; Candelier, P.; Reimbold, G.

doi:10.1109/55.761013

Cited by 18 publications

(7 citation statements)

References 7 publications

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“…7a,b and c, respectively. Here the retention time model with linear variations according to the temperature, which employs a T extrapolation model by Salvo et al ., was considered 35, 36 . The inset figures in Fig.…”

Section: Resultsmentioning

confidence: 99%

Ta2O5-TiO2 Composite Charge-trapping Dielectric for the Application of the Nonvolatile Memory

Wei

Shen

Ding

et al. 2017

Sci Rep

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The charge-trapping memory devices with a structure Pt/Al2O3/(Ta2O5)x(TiO2)1−x/Al2O3/p-Si (x = 0.9, 0.75, 0.5, 0.25) were fabricated by using rf-sputtering and atomic layer deposition techniques. A special band alignment between (Ta2O5)x(TiO2)1−x and Si substrate was designed to enhance the memory performance by controlling the composition and dielectric constant of the charge-trapping layer and reducing the difference of the potentials at the bottom of the conduction band between (Ta2O5)x(TiO2)1−x and Si substrate. The memory device with a composite charge storage layer (Ta2O5)0.5(TiO2)0.5 shows a density of trapped charges 3.84 × 1013/cm2 at ± 12 V, a programming/erasing speed of 1 µs at ± 10 V, a 8% degradation of the memory window at ± 10 V after 104 programming/erasing cycles and a 32% losing of trapped charges after ten years. The difference among the activation energies of the trapped electrons in (Ta2O5)x(TiO2)1−x CTM devices indicates that the retention characteristics are dominated by the difference of energy level for the trap sites in each TTO CTM device.

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Section: Resultsmentioning

confidence: 99%

Ta2O5-TiO2 Composite Charge-trapping Dielectric for the Application of the Nonvolatile Memory

Wei

Shen

Ding

et al. 2017

Sci Rep

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“…It has even been proposed that a T extrapolation law should rather be used [4], based on retention tests on floating gate devices with ONO stacks.…”

Section: Resultsmentioning

confidence: 99%

On the Roll-Off of the Activation Energy Plot in High-Temperature Flash Memory Retention Tests and its Impact on the Reliability Assessment

Govoreanu

Houdt

2008

IEEE Electron Device Lett.

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In this letter, we discuss the experimental behavior of high-κ interpoly dielectrics in floating gate memory devices with respect to the activation energy plot. It is shown that the Arrhenius extrapolation may overestimate the ten-year lifetime predictions. However, a clear correlation between the activation energy plot and the trap levels in the interpoly dielectric can be established, based on theoretical grounds. It is shown that a single-trap level typically follows an 1/T law, while a roll-off of the activation energy plot suggests the existence of various trap levels in the interpoly dielectrics. These findings have practical implications on the high-temperature retention testing methodology of novel nonvolatile memory with high-κ interpoly dielectrics.

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“…In order to estimate the device lifetime using the Arrhenius model, E aa should be a constant. However, real experimental data shows E aa roll-off characteristics [6][7][8]. Figure 1(f) shows a comparison of the results for the extracted E aa with the E a of each mechanism according to the baking temperature.…”

Section: Modeling Of Apparent Activation Energymentioning

confidence: 99%

“…This Arrhenius model is used under the assumption that the E aa is constant with temperature. However, it has been continuously reported that the Arrhenius plot shows not a straight line but the E aa roll-off behavior mainly due to the coexistence of various failure mechanisms [6][7][8]. In order to predict the accurate lifetime of the device, physical mechanisms on the abnormal E aa behavior should be understood.…”

Section: Introductionmentioning

confidence: 99%

Modeling of apparent activation energy and lifetime estimation in NAND flash memory

Lee

Kang

Hwang

et al. 2015

Semicond. Sci. Technol.

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Misunderstanding apparent activation energy (E aa ) can cause serious error in lifetime predictions. In this paper, the E aa is investigated for sub 20 nm NAND flash memory. In a hightemperature (HT) regime, the interface trap (N it ) recovery mechanism has the greatest impact on the charge loss. However, the values of E aa and E a(Nit) have a wide difference. Also, the lifetime of the device cannot be estimated by the Arrhenius model due to the E aa roll-off behavior. For the first time, we reveal the origin of abnormal characteristics on E aa and derive a mathematical formula for E aa as a function of each E a(mechanism) in NAND flash memory. Using the proposed E aa equation, the accurate lifetime for the device is estimated.

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A new extrapolation law for data-retention time-to-failure of nonvolatile memories

Cited by 18 publications

References 7 publications

Ta2O5-TiO2 Composite Charge-trapping Dielectric for the Application of the Nonvolatile Memory

Ta2O5-TiO2 Composite Charge-trapping Dielectric for the Application of the Nonvolatile Memory

On the Roll-Off of the Activation Energy Plot in High-Temperature Flash Memory Retention Tests and its Impact on the Reliability Assessment

Modeling of apparent activation energy and lifetime estimation in NAND flash memory

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