A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configuration

“…The split C-V measurement, frequently used to determine the effective carrier mobility in MOSFETs, is also feasible in Ψ-MOSFETs (20). The capacitance is measured between the gate and interconnected source/drain contacts.…”

Section: C-v Measurements In ψ-Mosfet Configurationmentioning

confidence: 99%

(Invited) The Pseudo-MOSFET: Principles and Recent Trends

et al. 2013

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The pseudo-MOSFET (Ψ-MOSFET) is a fascinating transistor based on the upside-down MOS configuration of semiconductor-on-insulator (SOI) wafers. This technique has been conceived for quick characterization of as-grown SOI materials. MOSFET-like characteristics are measured and simple parameter extraction techniques deliver the material properties: carrier mobility and lifetime, threshold and flat-band voltages, density of interface traps and oxide charges, doping level. After reviewing the methodology for reliable characterization, we focus on recent trends enabling the enrichment of the technique.

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“…An useful, and recently proposed, 6 application of pointcontact techniques, on bare SOI wafers, is the determination of carrier mobility as a function of the substrate voltage or the inversion/accumulation charge density. To do so, Split-C(V) measurements (Figure 1(c)) are combined with the MOS-like I D (V G ) characteristics.…”

Section: Introductionmentioning

confidence: 99%

On the effective mobility extraction by point-contact techniques on silicon-on-insulator substrates

Fernández

Rodríguez

Márquez

et al. 2015

Journal of Applied Physics

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In this work, we introduce the mobility vs. effective electric field representation for bare siliconon-insulator substrates. The key factors determining the effective field in the silicon film are identified and modeled. This representation sheds light on the origins of the carrier mobility differences observed in passivated and non-passivated wafers. At low effective electric field, the roles of the Coulomb scattering, determined by the top-interface, and the impact of the silicon film thickness are clearly disclosed. Two and four point-contact characterization techniques are compared; caution is called when the two point Pseudo-MOSFET configuration is used without calibration of the current form factor, since it may lead to an underestimation of the mobility values. Nevertheless, when the effective field and current form factors are evaluated accurately, we report that the carrier mobility of the silicon film at high effective electric field, with passivated surface or not, obeys the Universal Mobility Curves. V C 2015 AIP Publishing LLC.

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A new characterization technique for SOI wafers: Split C(V) in pseudo-MOSFET configuration

Cited by 19 publications

References 16 publications

Characterization of the electrical properties of advanced silicon-on-insulator (SOI) materials and transistors

Characterization of the electrical properties of advanced silicon-on-insulator (SOI) materials and transistors

(Invited) The Pseudo-MOSFET: Principles and Recent Trends

On the effective mobility extraction by point-contact techniques on silicon-on-insulator substrates

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