On the effective mobility extraction by point-contact techniques on silicon-on-insulator substrates

Abstract

In this work, we introduce the mobility vs. effective electric field representation for bare siliconon-insulator substrates. The key factors determining the effective field in the silicon film are identified and modeled. This representation sheds light on the origins of the carrier mobility differences observed in passivated and non-passivated wafers. At low effective electric field, the roles of the Coulomb scattering, determined by the top-interface, and the impact of the silicon film thickness are clearly disclosed. Two and four point-contact characterization techniques are compared; caution is called when the two point Pseudo-MOSFET configuration is used without calibration of the current form factor, since it may lead to an underestimation of the mobility values. Nevertheless, when the effective field and current form factors are evaluated accurately, we report that the carrier mobility of the silicon film at high effective electric field, with passivated surface or not, obeys the Universal Mobility Curves. V C 2015 AIP Publishing LLC.

Electrical characterization and conductivity optimization of laser reduced graphene oxide on insulator using point-contact methods

“…This type of measurement is easier to be carried out, since there is no need to take precautions regarding probe alignment, but it is affected by the impact of the contact resistance which can eventually mask the intrinsic conductivity of the sample under study. 21 Note also that even in the case that the contact resistance could be neglected, the resistance measured by the rst method may not correspond to the value given by V 2-3 /I 2-3 due to the current spreading. Nevertheless, the two point-contact method represents a good procedure to determine the contact resistance (distance-dependent two-point probe method).…”

Conditions for the identical distribution of free carriers in thin films

“…Mobility is a key quantity in electronic transport that provides an understanding of the physical processes affecting the motion of free carriers [1][2][3][4]. Comparative analysis of mobility as a key figure of merit of heterosystems is of great importance in synthesizing novel materials, developing novel thin-film technologies, interface modification, controlling fabrication of films and devices on their base [5][6][7][8][9][10].…”