A New and Better Method for Extracting the Parasitic Elements of On-Wafer GaN Transistors

Landa, Andres Zarate-de; Zúñiga‐Juárez, J. E.; Reynoso-Hernández, J.A.; Maya-Sanchez, M. C.; Piner, E. L.; Linthicum, K. J.

doi:10.1109/mwsym.2007.380077

Cited by 13 publications

(3 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Small signal models of advanced devices are needed for CAD based simulations [12] for analysis and validation of newly developed device structures [13]. In present scenario, analytical models are much exploited for getting true feedback about optimization of fabrication process in semiconductor industries [14], [15]. In past most of small signal models developed for conventional HEMT structures are based on various approaches of device modelling [16], [17].…”

Section: Introductionmentioning

confidence: 99%

TCAD Simulations and Small Signal Modeling of DMG AlGaN/GaN HFET

Yadav¹,

Pathak²,

Mehra³

2017

IJECE

View full text Add to dashboard Cite

This article presents extraction of small signal model parameters and TCAD simulation of novel asymmetric field plated dual material gate AlGaN/GaN HFET first time. Small signal model is essential for design of LNA and microwave electronic circuit by using the proposed superior performance HFET structure. Superior performances of device are due to its dual material gate structure and field plate that can provide better electric field uniformity, suppression of short channel effects and improvement in carrier transport efficiency. In this article we used direct parameter extraction methodology in which S-parameters of device were measured using pinchoff cold FET biasing. The measured S-parameters are then transformed into Y-parameters to extract capacitive elements and then in to Z-parameters to extract series parasitic elements. Intrinsic parameters are extracted from Y-parameters after de-embedding all parasitic elements of devce. Microwave figure of merits and dc performance are also studied for proposed HFET. The important figure of merits of device reported in the paper include transconductance, drain conductance, current gain, transducer power gain, available power gain, maximum stable gain, maximum frequency of oscillation, cut-off frequency, stability factor and time delay. Reported results are valdated with experimental and simulation results for consistency accuracy. Keyword:Cutoff frequency HEMT model Microwave figure of merits Parameters extraction Small signal model

show abstract

Section: Introductionmentioning

confidence: 99%

TCAD Simulations and Small Signal Modeling of DMG AlGaN/GaN HFET

Yadav¹,

Pathak²,

Mehra³

2017

IJECE

View full text Add to dashboard Cite

show abstract

“…In Reference [4], an improved small-signal equivalent circuit model was proposed by considering the co-planar waveguide effect capacitances. In Reference [5], a method for extracting parasitic resistances and parasitic inductances was introduced by biasing the device with low DC forward gate current and by floating the drain. In Reference [6], a parasitic parameters extraction procedure was introduced, which uses only pinch-off S-parameters measurement for accurate extraction of the parasitic elements.…”

Section: Introductionmentioning

confidence: 99%

Small-signal model parameter extraction for AlGaN/GaN HEMT

Zheng

Zhang

et al. 2016

J. Semicond.

View full text Add to dashboard Cite

A new 22-element small signal equivalent circuit model for the AlGaN/GaN high electron mobility transistor (HEMT) is presented. Compared with the traditional equivalent circuit model, the gate forward and breakdown conductions (Ggsf and Ggdf) are introduced into the new model to characterize the gate leakage current. Additionally, for the new gate-connected field plate and the source-connected field plate of the device, an improved method for extracting the parasitic capacitances is proposed, which can be applied to the small-signal extraction for an asymmetric device. To verify the model, S-parameters are obtained from the modeling and measurements. The good agreement between the measured and the simulated results indicate that this model is accurate, stable and comparatively clear in physical significance.

show abstract

“…In References [8,9], a 22-element distribution model was proposed using the optimization technique. In Reference [10], a method for extracting parasitic resistances and parasitic inductances was introduced by biasing the device with low DC forward gate current and by floating the drain. In Reference [11], a method for calculating the gate resistance and inductance of GaN HEMTs was introduced based on the extreme points of the Zll curves.…”

Section: Introductionmentioning

confidence: 99%

Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances

Wang

et al. 2015

J. Semicond.

View full text Add to dashboard Cite

Given the coplanar waveguide (CPW) effect on AlGaN/GaN high electron mobility transistors at a high frequency, the traditional equivalent circuit model cannot accurately describe the electrical characteristics of the device. The admittance of CPW capacitances is large when the frequency is higher than 40 GHz; its impact on the device cannot be ignored. In this study, a small-signal equivalent circuit model considering CPW capacitance is provided. To verify the model, S -parameters are obtained from the modeling and measurements. A good agreement is observed between the simulation and measurement results, indicating the reliability of the model.

show abstract

A New and Better Method for Extracting the Parasitic Elements of On-Wafer GaN Transistors

Cited by 13 publications

References 8 publications

TCAD Simulations and Small Signal Modeling of DMG AlGaN/GaN HFET

TCAD Simulations and Small Signal Modeling of DMG AlGaN/GaN HFET

Small-signal model parameter extraction for AlGaN/GaN HEMT

Small signal modeling of AlGaN/GaN HEMTs with consideration of CPW capacitances

Contact Info

Product

Resources

About