A measurement-based quasi-static nonlinear field-effect transistor (FET) model relying on an artificial neural network (ANN) approach and using real-time active load-pull (RTALP) measurement data for the model extraction is presented for an SOS-MOSFET. The efficient phase sweeping of the RTALP drastically reduces the number of large-signal measurements needed for the model development and verification while maintaining the same intrinsic voltage coverage as in conventional passive or active load-pull systems. Memory effects associated with the parasitic bipolar junction transistor (BJT) in the SOS-MOSFET are accounted for by using a physical circuit topology together with the simultaneous ANN extraction of: 1) the intrinsic FET current-voltage characteristics; 2) the intrinsic charges of the FET; and 3) the BJT dc characteristics, all from the same modulated large-signal RF data. The verification of the model using load-lines, output power, power efficiency, and load-pull, which is performed using two additional independent RTALP measurements, demonstrates that a reasonably accurate large-signal RF device model accounting for memory effects can be extracted from a single 10.5-ms RTALP measurement with a physically based ANN model. Index Terms-Artificial neural network (ANN), large-signal network analyzer (LSNA), memory effects, MOSFET, parasitic bipolar junction transistor (P-BJT), real-time active load-pull (RTALP).
By biasing the AlGaN/GaN HEMTs with low DC gate forward current and floating drain, a new method for extracting parasitic resistances and parasitic inductances is introduced. The originality of the proposed method lies in the low DC gate forward current used for extracting Rg and Lg. While the classical method for extracting Rg and Lg uses a set of Sparameters measured under different large DC gate forward current, the proposed method uses a data set of S-parameters measured at a single low DC gate forward current. The excellent agreement between model and experimental data verify the validity of the proposed method.Index Terms -AlGaN/GaN HEMTs, parasitic elements, smallsignal equivalent circuit.
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