A new acceptor level in indium-doped silicon

Baron, R.; Young, M. H.; Neeland, J. K.; Marsh, O. J.

doi:10.1063/1.89249

Cited by 71 publications

(24 citation statements)

References 9 publications

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“…8 meV observed for the shallower indium defect agrees with the value of ill ± 2 meV determined by Baron et al , ( 17) indicating that it is the same defect they observed. Also, the 56.3 meV observed for the sha llower aluminum defect agrees with the thermal activation energy often measured for aluminum , indicating t hat this shallower defect can dominate the electrical transport measurements under certain cir cumstance~.…”

supporting

confidence: 81%

“…At the present time we have not been able to determine the origin of this shallow center. The work of Baron et al (8) suggests that this defect is not related to oxygen since it was observed in vacuum float-zoned crystals. In our crysta ls the indium concentration , the indium:X concentration and the oxygen concentration are all increasing wit h growth temperature , so oxygen cannot be ruled out on the basis of our work.…”

Section: Origin Of the Indium:x Defectmentioning

confidence: 98%

See 1 more Smart Citation

Studies of Indium-Doped Silicon

Scott¹,

Jones²,

Hager³

1978

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supporting

confidence: 81%

Section: Origin Of the Indium:x Defectmentioning

confidence: 98%

Studies of Indium-Doped Silicon

Scott¹,

Jones²,

Hager³

1978

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“…This energy is significantly lower than that of substitutional In in a Si matrix ͑0.156 eV͒. 14 Baron et al 15 attributed this acceptor level to a substitutional carbonsubstitutional indium (C S ϪIn S ) pair defect.…”

Section: ͓S0021-8979͑99͒06622-0͔mentioning

confidence: 99%

“…In ϩ was implanted in wafers I and II, with a dose of 5ϫ10 14 cm Ϫ2 at 50 keV. Both implantations were performed at room temperature ͑RT͒.…”

mentioning

confidence: 99%

Enhanced electrical activation of indium coimplanted with carbon in a silicon substrate

Boudinov

Souza

Saul

1999

Journal of Applied Physics

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Electrical activation of In of 18%–52% of the implanted dose (5×1014 cm−2) was obtained in Si samples having a C+ coimplantation after rapid thermal annealing (RTA) at 800–1000 °C for 15 s. This electrical activation yield markedly contrasts with that in samples singly implanted with In in which only ≅0.5% of the dose was activated. The following features were observed in the coimplanted samples: (i) a reverse annealing of the electrical activation in the temperature range of 800–900 °C; (ii) significant reduction of the In profile redistribution during RTA; and (iii) the electrically activated In concentration is substantially higher than the substitutional In concentration. These findings are discussed in terms of the interaction between C atoms and Si self-interstitials (SiI), strain compensation between C and In atoms in the Si lattice, and formation of stable In substitutional–C substitutional acceptors centers.

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“…In comparison, the acceptor level of boron lies at 0.048 eV, whereas after carbon co-implantation, the acceptor level of In-C pairs is 0.111 eV [7]. Experimental evidence demonstrates that the enhanced activation associated with the acceptor level in the bandgap is linked to a substitutional carbon-substitutional indium pair C8.4.2 [7]. For evaluation of activation a computational procedure similar to that used in Aronowitz et al is adopted [8].…”

Section: Methodsmentioning

confidence: 99%

Interactions of Indium, Arsenic and Carbon in Silicon Using the Pseudopotential Technique

2004

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Factors limiting the activation of indium in silicon are examined via the ab initio pseudopotential technique. The role of carbon in the enhancement/retardation of activation/diffusion respectively is clarified. It is found that (1) adjacent substitutional indium atoms are deactivated. Only second neighbour sites of indium are activated unlike the case of boron, where all substitutional sites remain activated.(2) Silicon self-interstitials deactivate indium by trapping them on substitutional sites. Carbon, on the other hand, traps such selfinterstitials with higher binding energy and prevents them from deactivating indium. (3) Since both indium and carbon diffusion is interstitial mediated, carbon reduces indium diffusion on account of its higher binding energy with the self-interstitial. Moreover, the release of the carbon interstitial is more favourable than the release of the indium interstitial from a carbon-indium pair. Therefore, carbon minimises indium interstitial diffusion. (4) Arsenic enhances deactivation of indium by neutralisation and by strong binding on adjacent substitutional sites. Furthermore since the release of the indium interstitial is more favourable in comparison to the release of the arsenic interstitial from the indium-arsenic pair, indium diffusion is enhanced in the presence of arsenic.

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A new acceptor level in indium-doped silicon

Cited by 71 publications

References 9 publications

Studies of Indium-Doped Silicon

Studies of Indium-Doped Silicon

Enhanced electrical activation of indium coimplanted with carbon in a silicon substrate

Interactions of Indium, Arsenic and Carbon in Silicon Using the Pseudopotential Technique

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