A Neural Network Modeling Approach to Power amplifiers Taking into Account Temperature Effects

Zhoul, Shao-Hua; Fu, Haipeng; Ma, Jan; Zhang, Qi‐Jun

doi:10.1109/mwsym.2018.8439468

Cited by 8 publications

(25 citation statements)

References 13 publications

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“…PAs are one of the critical circuit elements in any radio system to drive antennas, where antennas are used for transmission and receiving a signal through free space (usually air) [27]- [30]. Although it is well known that the behaviors of any PAs are strongly dependent on the temperature and humidity, the fluctuation in environmental conditions, primarily temperature [31]- [33], and humidity, causes the performance degradations of the PA [34]- [38].…”

Section: Introductionmentioning

confidence: 99%

“…In general, it is expected that a PA used in an RF system should maintain the specifications throughout its lifetime as initially designed and would not change no matter how the environmental conditions will vary. However, due to the lack of a comprehensive temperature and humidity dependent device model, their analysis and dependency in PA are confined to a limited temperature and humidity range [34]. When the ambient temperature and humidity exceed the simulated temperature and humidity range, the actual performance of the PA becomes far from the expected design performance [34].…”

Section: Introductionmentioning

confidence: 99%

“…However, due to the lack of a comprehensive temperature and humidity dependent device model, their analysis and dependency in PA are confined to a limited temperature and humidity range [34]. When the ambient temperature and humidity exceed the simulated temperature and humidity range, the actual performance of the PA becomes far from the expected design performance [34]. Suppose a PA used in a system does not perform as designed/expected under certain environmental situations.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Characteristics Modeling of GaN Class-AB Dual-Band PA Under Different Temperature and Humidity Conditions

Zhou

Jha

2021

IEEE Access

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As the technology scales down, besides the CAD tools and design guidelines, understanding circuit performance degradation as a consequence of transistor degradation becomes essential for designers. Due to several adverse environmental conditions, the study of performance degradation in the power amplifier (PA) is very demanding research. In this paper, an RF PA is experimentally studied to observe various characteristic degradations in a broad range of operating temperature and humidity conditions. Based on a few key measurement points, a measurement-based modeling method is proposed to help designers make intelligent decisions to minimize the performance degradation effects. This method uses four two-dimensional interpolation models, and the results show that the prediction results of the four planar interpolation models are in good agreement with the measurement results. The results presented in this article help select design models for the RF power amplifier that can analyze the performance degradation of the transistor parameters in advance. Cubic and spline interpolation has the highest model accuracy among the four two-dimensional models, while the nearest interpolation offers the shortest training time.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Characteristics Modeling of GaN Class-AB Dual-Band PA Under Different Temperature and Humidity Conditions

Zhou

Jha

2021

IEEE Access

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“…are getting more and more popular in radio systems 1‐8 . It is well known that the behaviors of any PAs strongly dependent on the temperatures, 9‐10 the environmental temperature fluctuations will cause the degradations of the PA indexes and the system performances will be suffered eventually 11‐13 …”

Section: Introductionmentioning

confidence: 99%

“…It is reported that the system failures caused by the temperature is as high as 21% of the total equipment failures in U.S. coastal bases 14 . Obviously, PA failures could be one of the major reasons to lead to the system failures if PAs are employed in the systems 9 . However, the failure is an event that ends the life of a specific product 15 .…”

Section: Introductionmentioning

confidence: 99%

Experimentally investigating the degradations of the GaN PA indexes under different temperature conditions

Zhou

2020

Micro & Optical Tech Letters

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In order to understand the PA's indexes, degradations with respect to the temperature changes before suppressing such degradations or compensating those temperature effects of the PAs. The degradations of the gallium nitride (GaN) PA indexes under different temperature conditions with a fixed relative humidity of 85% are investigated experimentally. The S21, power‐added efficiency (PAE) and output power of the PA degrade with the increase of the temperature. The main reasons for these degradations are discussed and analyzed in this paper. The results presented in the paper can help designers to understand the temperature effects on degradations of GaN PA indexes comprehensively so that the designers could consider the effects in the design cycle of the temperature compensation circuits in advance.

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Temperature behavior modeling based on resilient BPNN for a GaAs pHEMT high gain MMIC PA

Lin,

Jia,

et al. 2023

Int J Numerical Modelling

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As the key component of transceiver, power amplifier (PA) plays an extremely important role in wireless communication system. In order to accurately characterize the performance variation of PA at any temperature, the temperature behavior of a gallium arsenide (GaAs) pseudomorphic high electron mobility transistor (pHEMT) high gain monolithic microwave integrated circuit (MMIC) PA is modeled in this paper. In this modeling, the resilient back propagation neural network (BPNN) is utilized to do the temperature behavior modeling for this PA. The investigation shows that the minimum mean square error (MSE) of the prediction results is 4.9607 × 10−4, which implies that it is feasible to use this modeling method to characterize the temperature behavior of PA. This modeling not only theoretically overcomes the problem of slow convergence speed of BPNN, but also solves the limitation of experimental devices and time setting. It will provide a more convenient guidance for test engineers.

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A Neural Network Modeling Approach to Power amplifiers Taking into Account Temperature Effects

Cited by 8 publications

References 13 publications

Characteristics Modeling of GaN Class-AB Dual-Band PA Under Different Temperature and Humidity Conditions

Characteristics Modeling of GaN Class-AB Dual-Band PA Under Different Temperature and Humidity Conditions

Experimentally investigating the degradations of the GaN PA indexes under different temperature conditions

Temperature behavior modeling based on resilient BPNN for a GaAs pHEMT high gain MMIC PA

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