A nanostructured copper telluride thin film grown at room temperature by an electrodeposition method

Abstract

Copper telluride onion flower like microstructures, constructed by quantum dots with various diameters, were obtained by a potentiostatic electrodeposition method at room temperature. The structural, optical, surface morphology, compositional analysis and Raman spectra properties of the deposited films have been studied using X-ray diffraction, optical absorption with scanning electron microscopy, EDAX, and Raman spectroscopy. The electrolyte concentration and deposition time can be used to control the diameter of the electrodeposited quantum dots to within a range of 50-55 nm. The films are found to be stoichiometric in composition. The optical constants such as the optical band gap energy and the optical absorption spectra show significant variation in their values with a change in deposition time. Upon deposition time the band gap energy increased from a value of 2.74 to 2.89 eV.

Influence of substrate temperature on the structural, morphological, optical and electrical properties of copper telluride thin films prepared by electron beam evaporation method

“…Dhasada et al [4] reported band gap value of copper telluride thin films varies in the range from 2.74 to 2.89 eV which is closer to the band gap value reported in the present work. The observed change in the optical band gap may be due to the improvement in crystallinity, formation of various phases and the variation in the stoichiometry of the films.…”

“…% of copper present in the film deposited at 300 ºC compared to the film deposited at RT and 200 ºC. Dhasade et al[4] obtained higher…”

An Efficient Simultaneous Electrochemical Detection of Nanomolar Epinephrine and Uric Acid using Low Temperature Synthesized Nano‐sized Copper Telluride

“…This findings suggest the combination of two metals might be making either n‐type or p‐type semiconductor in CuTe/GP which makes it suitable for showing enhanced electrocatalytic activity in comparison with Cu/GP and Te/GP electrodes. Here combined system Cu and Te makes an alloy which is a semiconductor having band gap value 2.7 eV [28a]. Discussing the exact role of of Cu or Te in CuTe nps for simultaneous electrochemical detection of EP and UA needs more detailed work and now it is beyond the scope of this paper.…”

Synthesis of Copper Telluride Thin Films by Electrodeposition and Their Electrical and Thermoelectric Properties

“…Various methods have been developed for the synthesis of copper telluride, including hydrothermal, solvothermal, ion-exchange, vacuum-deposition, and electrodeposition techniques (Zhang et al, 2006;Dhasade et al, 2012;Kriegel et al, 2013;Nethravathi et al, 2014;Bhuvaneswari et al, 2017). Hydrothermal synthesis involves the decomposition of reactants or chemical reactions between them at high temperature and high pressure in an aqueous solution, while solvothermal synthesis is similar but involves a non-aqueous solvent (Nethravathi et al, 2014).…”