A multi-purpose Schrödinger-Poisson Solver for TCAD applications

Abstract

We present the Vienna Schrödinger-Poisson Solver (VSP), a multi-purpose quantum mechanical solver for investigations on nano-scaled device structures. VSP includes a quantum mechanical solver for closed as well as open boundary problems on fairly arbitrary one-dimensional cross sections within the effective mass framework. For investigations on novel gate dielectrics VSP holds models for bulk and interface trap charges, and direct and trap assisted tunneling. Hetero-structured semiconductor devices, like resonant tunneling diodes (RTD), can be treated within the closed boundary model for quick estimation of resonant energy levels. The open boundary model allows evaluation of current voltage characteristics.

Computational study of carbon-based electronics

“…The phonon energy and the electron-phonon matrix elements for OP phonons are assumed to be approximately constant and independent of the phonon wave-vector [40]. Under these assumptions all terms except the exponential term in (21) and (22) can be taken out of the integral (23) and one obtains [43] π/(3a C−C )…”

“…Because of the complexity of novel nano-electronic devices, modern TCAD tools based on quantum transport models are required for the analysis of such devices. A multi-purpose quantummechanical solver, the Vienna Schrödinger-Poisson solver VSP, with the aim to aid theoretical as well as experimental research on nano-scale electronic devices, has been developed at the Institut für Mikroelektronik, Technische Universität Wien [22]. VSP is a quantum mechanical solver for closed as well as open boundary problems.…”

Parameter modeling for higher-order transport models in UTB SOI MOSFETs

“…In the SMC simulator we consider non-parabolic bands, quantization effects, phonon induced scattering as well as surface roughness scattering [8]. The SP solver incorporates the quantum confinement in inversion layers [9,10].…”

Current transport models for nanoscale semiconductor devices

“…In case of computing leakage currents from the inversion layers the boundary condition to the Schrödinger equation must describe slowly decaying quasi-bound channel states. It can conveniently be achieved by introducing a complex coordinate stretching [149]. This technique allows the artificial absorbing layer to be applied at the interface.…”