A Monte Carlo simulation of the processes of nanostructure growth: The time-scale event-scheduling algorithm

Influence of catalyst drop properties on GaAs nanowhisker growth

“…Simulation was carried out using program package SilSim3D on the base of lattice Monte Carlo model [18]. The concept of VLS mechanism of GaAs NW growth was described in [17].…”

Formation of GaAs nanostructures by droplet epitaxy—Monte Carlo simulation

“…Previously it was demonstrated that an exact correspondence between Monte Carlo time and real time can be established [22]. The details of our algorithm realization can be found elsewhere [21].…”

“…Simulation was carried out using program package SilSim3D that had been developed for the analysis of atomic processes in three-dimensional surface layers on crystal substrates [21]. The model surface layer is considered to be a semi-infinite crystal contacting vacuum.…”

Monte Carlo simulation of GaAs nanostructure growth by droplet epitaxy

“…Simulation was carried out using program package Sil-Sim3D on the base of lattice Monte Carlo model [15]. To simulate GaAs nanostructure growth it was necessary to take into account volatility of arsenic, low melting point of gallium clusters and As solubility in liquid gallium.…”