Monte Carlo simulation of GaAs nanostructure growth by droplet epitaxy

Abstract

A kinetic Monte Carlo model of droplet epitaxy is suggested. Proposed model was used for analysis of mechanisms of GaAs nanostructure formation during crystallization of Ga drops in arsenic flux. Depending on temperature and arsenic flux intensity different shapes of nanostructures can be achieved. A range of model growth conditions corresponding to core-shell compact clusters, crystal dots, nanoholes and nanorings was determined.