A Monolithic Active Pixel Sensor for ionizing radiation using a 180nm HV-SOI process

Hemperek, T.; Kishishita, Tetsuichi; Krüger, H.; Wermes, N.

doi:10.1016/j.nima.2015.02.052

Cited by 55 publications

(17 citation statements)

References 7 publications

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“…In [11] it was shown that depleted active pixel sensors can be made in a commercial HV CMOS technology which allows application of higher bias voltages resulting in larger depleted depths and therefore significant charge collection from drift of charge carriers which is necessary for HL-LHC environment. This was followed by several other developments in various flavours of CMOS processes resulting in prototypes of active pixel detectors with significant depleted thickness [12][13][14] which can be commonly named as depleted CMOS pixels [15]. Recent irradiation study of depleted CMOS pixels irradiated with reactor neutrons up to HL-LHC fluence was published in [16].…”

Section: Introductionmentioning

confidence: 99%

Neutron irradiation test of depleted CMOS pixel detector prototypes

et al. 2017

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Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 kΩcm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation. The test structures were produced for investigation of CMOS technology in tracking detectors for experiments at HL-LHC upgrade. Measurements were made with passive detector structures in which current pulses induced on charge collecting electrodes could be directly observed. Thickness of depleted layer was estimated and studied as function of neutron irradiation fluence. An increase of depletion thickness was observed after first two irradiation steps to 1·10 13 n/cm 2 and 5·10 13 n/cm 2 and attributed to initial acceptor removal. At higher fluences the depletion thickness at given voltage decreases with increasing fluence because of radiation induced defects contributing to the effective space charge concentration. The behaviour is consistent with that of high resistivity silicon used for standard particle detectors. The measured thickness of the depleted layer after irradiation with 1·10 15 n/cm 2 is more than 50 µm at 100 V bias. This is sufficient to guarantee satisfactory signal/noise performance on outer layers of pixel trackers in HL-LHC experiments.

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Section: Introductionmentioning

confidence: 99%

Neutron irradiation test of depleted CMOS pixel detector prototypes

et al. 2017

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“…Regarding the small fill-factor structures, some devices of this type have been also produced in TowerJazz Ltd. [18] following the TJ 180 nm process as the TJ-Monopix device [11] or the TJ-Malta device [13]. A special type of CMOS technology, the High Voltage Silicon On Insulator, is also available at X-FAB Semiconductor Foundries AG [19], several devices have been implemented in the XFAB 180 nm process, like the XTB01 device [20]. Finally, it must be emphasized that the current technologies available for CMOS sensors offer feature sizes larger than 130 nm, therefore the radiation tolerance and logic density of these devices can be further improved with smaller sizes in the future.…”

Section: Commercial Cmos Foundriesmentioning

confidence: 99%

Overview of CMOS Sensors for Future Tracking Detectors

Marco-Hernandez

2020

Instruments

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Depleted Complementary Metal-Oxide-Semiconductor (CMOS) sensors are emerging as one of the main candidate technologies for future tracking detectors in high luminosity colliders. Their capability of integrating the sensing diode into the CMOS wafer hosting the front-end electronics allows for reduced noise and higher signal sensitivity, due to the direct collection of the sensor signal by the readout electronics. They are suitable for high radiation environments due to the possibility of applying high depletion voltage and the availability of relatively high resistivity substrates. The use of a CMOS commercial fabrication process leads to their cost reduction and allows faster construction of large area detectors. In this contribution, a general perspective of the state of the art of CMOS detectors for High Energy Physics experiments is given. The main developments carried out with regard to these devices in the framework of the CERN RD50 collaboration are summarized.

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“…The HV-SOI technology allows access to the handling wafer/substrate using vias to create a charge collecting node as well as provide bias to the sensor A standard CMOS circuit can be realized in the logic layer above BOX. The prototyped devices in HV-SOI technology XTB01and XT02 [30,31] are fully functional. Figure 17a shows that they have good radiation tolerance to surface damage.…”

Section: Hv-soimentioning

confidence: 99%

Overview and perspectives of depleted CMOS sensors for high radiation environments

Hemperek¹

2018

Proceedings of the 26th International Workshop on Vertex Detectors — PoS(Vertex 2017)

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To cope with increased radiation levels expected at the HL-LHC new approaches are being investigated using monolithic CMOS pixel detectors where readout electronics and depleted charge collection layer are combined. Those devices rely on radiation hard process technology, multiple nested wells, high resistivity substrates and ability to apply high voltage bias to achieve significant depletion depths. They can be thinned and backside processed for biasing. Since 2014, members of more than 20 groups in ATLAS are collaborating in CMOS pixel R&D in an ATLAS Demonstrator program pursuing sensor design and characterization with the goal to demonstrate that depleted CMOS pixels are suited for high rate, fast timing and high radiation operation at LHC. Many CMOS technology vendors have been approached in this effort. This contribution introduces challenges for the usage of CMOS pixel detectors at HL-LHC and gives a summary of different concepts and the current state of designs of depleted CMOS prototypes.

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A Monolithic Active Pixel Sensor for ionizing radiation using a 180nm HV-SOI process

Cited by 55 publications

References 7 publications

Neutron irradiation test of depleted CMOS pixel detector prototypes

Neutron irradiation test of depleted CMOS pixel detector prototypes

Overview of CMOS Sensors for Future Tracking Detectors

Overview and perspectives of depleted CMOS sensors for high radiation environments

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