A modified general model for sic power MOSFET in rail transportation application

Zhou, Zhida; Ge, Qiongxuan; Zhao, Lu; Yang, Bo

doi:10.1109/icems.2017.8056202

Cited by 6 publications

(5 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…According to [13,[32][33], the Enz-Krummenacher-Vittoz (EKV) model is able to predict MOSFET static behaviours all over the weak, moderate and strong inversion regions with a single expression. Compared with models in [10][11][12][13][14][15], its parameter extraction process is more straightforward. Here, we still use the improved EKV model proposed in [32,33] to describe M 1 .…”

Section: Static Characteristics Modelling Of Sic Mosfetmentioning

confidence: 99%

“…The variable capacitance can be implemented using a voltage controlled current source [14][15][16], where C is the expression of curve-fitted functions and V is the voltage on the capacitance. This variable capacitance model is widely-used in SiC MOSFET modelling as it can avoid the risk of non -convergence.…”

Section: Dynamic Characteristics Modelling Of Sic Mosfetmentioning

confidence: 99%

“…The three nonlinear interelectrode capacitances are meticulously modelled and the nonlinearity of the drain-to-source capacitance is studied in detail [11,12]. Customized formulas were used to model the gate-to-drain miller capacitance [13,14]. In most models [11,[13][14][15], only a junction capacitance of the SiC MOSFET body diode is used to model the drain-to-source capacitance C ds , which is prone to inaccuracy.…”

Section: Introductionmentioning

confidence: 99%

“…Customized formulas were used to model the gate-to-drain miller capacitance [13,14]. In most models [11,[13][14][15], only a junction capacitance of the SiC MOSFET body diode is used to model the drain-to-source capacitance C ds , which is prone to inaccuracy. Ref.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Improved simulation modelling and its verification for SiC MOSFET

Yang

Wang

Ding

et al. 2022

IET Power Electronics

View full text Add to dashboard Cite

Of crucial importance is to accurately simulate its switching characteristics for the application of SiC MOSFET. Due to the ultrafast switching capability, SiC MOSFET is dependent on interelectrode capacitances and extremely sensitive to parasitics. Therefore, accurate modelling of interelectrode capacitances and knowledge of parasitics are required. Here, an improved SiC MOSFET model driven by an empirical formula with three segments for the non-linear drain-to-gate capacitance in relationship with the drain-to-source voltage is developed. In this way, the capacitance fitting at the inflection point that has a great impact on the switching delay is much improved. By simple self-made high-voltage C-V measurement systems, the accuracy of the proposed formula is verified. More importantly, intruded parasitics by the commonly-used coaxial shunt current measurement loop is analysed in detail. The equivalent circuit of the current measurement loop is incorporated into the device simulation circuit to compensate measurement errors. In this way, the improved model can be more reliably verified and evaluated. A double pulse test is built to verify the proposed model. By comparison of simulation and experimental results, the proposed model works well at different voltage and current operating conditions and offers a reliable and accurate modelling approach.

show abstract

Section: Static Characteristics Modelling Of Sic Mosfetmentioning

confidence: 99%

Section: Dynamic Characteristics Modelling Of Sic Mosfetmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Improved simulation modelling and its verification for SiC MOSFET

Yang

Wang

Ding

et al. 2022

IET Power Electronics

View full text Add to dashboard Cite

show abstract

“…Therefore, the 3300-V class Si-based insulated-gate bipolar transistors (IGBT) are the most commonly used power semiconductor devices for railway traction today. Compared with traditional silicon, the silicon carbide (SiC) is considered the next-generation semiconductor material for high voltage power devices [4][5][6][7][8]. Before 2018, although it had taken quite a long-term development of technology, process and promotion, the voltage class of the commercial full SiC devices was still merely 1700 V and below, which could only meet the requirements of the lowvoltage power conversion applications, such as DC/DC power supply, illumination, medical instrument, household appliances etc.…”

Section: Introductionmentioning

confidence: 99%

Analysis on characteristic of 3.3‐kV full SiC device and railway traction converter design

Ding

Dou

Qian

et al. 2022

IET Power Electronics

View full text Add to dashboard Cite

With the rapid development of wide‐band gap semiconductor chip and package technologies, the voltage class of commercial silicon carbide (SiC) device is gradually improved. This paper concentrates on the latest 3.3‐kV full SiC‐based metal oxide semiconductor field‐effect transistor (MOSFET) device and its application in railway traction. First, compared with the Si‐based insulated‐gate bipolar transistor (IGBT), the SiC‐based MOSFET shows lower switching loss but weaker short‐circuit capacity. Second, in the railway traction application, the SiC‐based MOSFET with high switching frequency could reduce the inverter loss, the harmonic loss and the noise of traction motor. Third, a well‐designed filter is necessary between the inverter and the motor to prevent the motor from terminal overvoltage and insulation problem, which are resulted from long cable and high dv/dt. Finally, a full‐SiC railway traction inverter prototype is built and tested, and shows obvious advantages on miniaturization and lightweight.

show abstract

A Highly Automated and Rapid Datasheet Driven Empirical Modeling Process of SiC MOSFETs with High Accuracy and Robust Convergence

Rao,

Wang

2023

2023 IEEE 15th International Conference on ASIC (ASICON)

View full text Add to dashboard Cite

A modified general model for sic power MOSFET in rail transportation application

Cited by 6 publications

References 13 publications

Improved simulation modelling and its verification for SiC MOSFET

Improved simulation modelling and its verification for SiC MOSFET

Analysis on characteristic of 3.3‐kV full SiC device and railway traction converter design

A Highly Automated and Rapid Datasheet Driven Empirical Modeling Process of SiC MOSFETs with High Accuracy and Robust Convergence

Contact Info

Product

Resources

About