A Model of Fringing Fields in Short-Channel Planar and Triple-Gate SOI MOSFETs

Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET

“…Conforming mapping is a powerful technique to derive fringing field in various MOS structures [7][8][9][10][11]. However, conformal mapping is not directly applicable to GAA MOSFETs due to the 3D cylindrical structure.…”

“…Previously published GAA MOSFET models such as that in [6] cannot handle the gate underlap structure. The effects of fringing field on planar MOSFETs with gate underlap structures have been investigated using conformal mapping [7][8][9][10][11]. For example, Refs.…”

“…For example, Refs. [8,9] modeled the fringing fields in planar and tri-gate SOI MOSFETs with a high degree of precision and Ref. [10] reported the potential model in underlap DG MOSFET.…”

2D analytical calculation of the electric field in lightly doped Schottky barrier double-gate MOSFETs and estimation of the tunneling/thermionic current

“…For the first time the conformal mapping technique [6] was successfully applied to solve multi-dimensional problems in active devices in [7]. Ernst et al applied the conformal mapping method in [8,9] to model the fringing fields from source/ drain into the body for Single-, Double-and Triple-Gate MOSFETs. It should be noted that effects of fringing fields are not taken into account in our following analysis.…”

Micro and nano on insulator

“…By contrast, in tall and narrow fins, the electrostatics is governed by the coupling of the lateral gates, which inherently tends to reduce or suppress the vertical coupling to the bottom gate [65,69]. The main point is that the surface potential at the fin-BOX interface can be totally controlled by the fringing field between the lateral gates [17].…”