2D analytical calculation of the electric field in lightly doped Schottky barrier double-gate MOSFETs and estimation of the tunneling/thermionic current

Schwarz, Mike; Holtij, Thomas; Kloes, Alexander; Iñı́guez, Benjamı́n

doi:10.1016/j.sse.2011.05.013

Cited by 14 publications

(2 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Their structure is rather similar to conventional MOSFETs, and therefore fully compatible with silicon CMOS technology [3]. The main difference relies in that the heavily doped source and drain regions in traditional MOSFETs are replaced by silicides, to form Schottky contacts: injection of charge inside the channel is due to thermionic or field emission (direct quantum tunneling) processes at the source contact [4], [5]. To obtain current levels suitable for practical applications, the use of materials providing low values for the SB is imperative.…”

Section: Introductionmentioning

confidence: 99%

Monte Carlo Study of Dopant-Segregated Schottky Barrier SoI MOSFETs: Enhancement of the RF Performance

Martín

Couso

Pascual

et al. 2014

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

This paper presents a detailed Monte Carlo study of the optimization of the dopant segregation (DS) layer in n-type Schottky barrier (SB)-MOSFET. It is shown that with a careful control of the DS layer parameters, dopant concentration (N dop ), and length (L dop ), the performance of the devices is significantly enhanced. The presence of the DS layer induces crucial effects in the injection processes at the Schottky contacts. The benefits of increasing the length and the doping level of the DS layer are studied from the microscopic point of view (transit times, average number of scatterings). The effect of varying these parameters is also analyzed through the nonquasi-static parameters of the small signal equivalent circuit, which can be useful for designers to improve the reliability of the SB-MOSFET technology. Index Terms-Dopant segregation (DS), Monte Carlo methods, RF performance, Schottky barrier (SB)-MOSFETs.

show abstract

Section: Introductionmentioning

confidence: 99%

Monte Carlo Study of Dopant-Segregated Schottky Barrier SoI MOSFETs: Enhancement of the RF Performance

Martín

Couso

Pascual

et al. 2014

IEEE Trans. Electron Devices

View full text Add to dashboard Cite

show abstract

“…In [2] we presented an analytical closed-form model for the electrostatics within a short channel SB-DG-MOSFET. From that we derived analytical models for the tunneling and thermionic current [3]. A similar numerical approach is presented in [4].…”

Section: Introductionmentioning

confidence: 99%

Explicit model for tunneling and thermionic current in Schottky barrier Double-Gate MOSFETs

Schwarz

Holtij

Kloes

et al. 2012

2012 13th International Conference on Ultimate Integration on Silicon (ULIS)

Self Cite

View full text Add to dashboard Cite

In this paper we present a new approach to calculate the tunneling and thermionic current in Schottky barrier Double-Gate MOSFETs (SB-DG-MOSFETs). This prediction is based on a physics-based two-dimensional analysis. Analytical approximations for the spatial tunneling current density and carrier distributions in the channel are introduced. From this explicit analytical model equations for the tunneling current are derived in closed-form which inherently include two-dimensional effects on the tunneling probability and the carrier distributions. Furthermore, an explicit analytical model equation for the thermionic current is derived. Comparison of the current with an already existing analytical numerical model and TCAD simulation data are in a good agreement for channel lengths down to 22nm.

show abstract

A 2D closed form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current

Graef

Holtij

Hain

et al. 2014

Microelectronics Journal

View full text Add to dashboard Cite

2D analytical calculation of the electric field in lightly doped Schottky barrier double-gate MOSFETs and estimation of the tunneling/thermionic current

Cited by 14 publications

References 16 publications

Monte Carlo Study of Dopant-Segregated Schottky Barrier SoI MOSFETs: Enhancement of the RF Performance

Monte Carlo Study of Dopant-Segregated Schottky Barrier SoI MOSFETs: Enhancement of the RF Performance

Explicit model for tunneling and thermionic current in Schottky barrier Double-Gate MOSFETs

A 2D closed form model for the electrostatics in hetero-junction double-gate tunnel-FETs for calculation of band-to-band tunneling current

Contact Info

Product

Resources

About