Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET

Zhang, Lining; Ma, Chenyue; He, Jin; Lin, Xinnan; Chan, Mansun

doi:10.1016/j.sse.2010.03.020

Cited by 35 publications

(4 citation statements)

References 12 publications

(23 reference statements)

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“…The current research in this field is largely geared toward an increasing of the device density through an aggressive scaling of the device-feature sizes [1], and an improvement of the MOSFETstructure performances such as those of the double-gate (DG) MOSFETs [2][3][4], nano-wire FETs [5][6][7], nanoscale FinFETs [8,9], and nano-tube transistors [10]. As the channel length of the MOSFETs continues to shrink to several tens of nanometers, the source-to-drain and gate-tunneling of these near-ballistic devices and the inversion layers that are of a several-nanometer thickness, which are in the MOSFETs, become important issues [11].…”

Section: Introductionmentioning

confidence: 99%

Control of Short-Channel Effects in Nano DG MOSFET Using Gaussian-Channel Doping Profile

Charmi¹

2016

Transactions on Electrical and Electronic Materials

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This article investigates the use of the Gaussian-channel doping profile for the control of the short-channel effects in the double-gate MOSFET whereby a two-dimensional (2D) quantum simulation was used. The simulations were completed through a self-consistent solving of the 2D Poisson equation and the Schrodinger equation within the non-equilibrium Green's function (NEGF) formalism. The impacts of the p-type-channel Gaussian-doping profile parameters such as the peak doping concentration and the straggle parameter were studied in terms of the drain current, on-current, off-current, sub-threshold swing (SS), and drain-induced barrier lowering (DIBL). The simulation results show that the short-channel effects were improved in correspondence with incremental changes of the straggle parameter and the peak doping concentration.

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Section: Introductionmentioning

confidence: 99%

Control of Short-Channel Effects in Nano DG MOSFET Using Gaussian-Channel Doping Profile

Charmi¹

2016

Transactions on Electrical and Electronic Materials

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“…In order to get effective controllability, the alignment of gate materials should be accurate at both the ends . A number of researchers proposed that the gate underlap concept for MOSFET could enrich the device performance because of the reduction in channel volume . The underlap engineering further reduces SCEs and improves the electrostatic and RF characteristics of MOS devices.…”

Section: Introductionmentioning

confidence: 99%

Effect of underlap length variation on DC/RF performance of dual material cylindrical MOS

Jena

Dash

Mishra

2016

Int J Numerical Modelling

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Summary Significant down‐scaling of device dimension has made cylindrical gate MOSFET (CG‐MOS), a cutting edge device for low power applications. But in order to sustain the competition for real‐time devices, it should have improved RF performances as well. In this paper, an analytical model of dual material cylindrical gate MOSFET (DMCG‐MOS) with underlap engineering has been developed using the solution of 2‐D Poisson's equation. The electrical parameters such as surface potential, threshold voltage and drain current are determined and compared with that of conventional CG‐MOS. The effect of the variation of underlap length on the DC/RF performance of the model has been extensively discussed. The results show improvement in the performance of threshold voltage, leakage current and transconductance generation factor (TGF) with the introduction of underlap at the drain end. On the contrary, the model with source underlap exhibits better drain current and higher cut‐off frequency. The analytical results are validated using Sentaurus TCAD device simulator. The improvement in DC and RF performance of this model would address emerging challenges posed by high frequency and low power applications. Copyright © 2016 John Wiley & Sons, Ltd.

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“…Also GAA MOSFET has excellent electrostatic control of the channel, robustness against SCEs, better scaling options, no floating body effect, larger equivalent number of gates, and ideal subthreshold swing as compared to other multiple gate MOSFETs. Hence, the GAA MOSFET is a promising solution for nanoscale technology complementary metal-oxide-semiconductor (CMOS) devices [11][12][13][14][15]. Recently, MOS devices with sub-50 nm channel length demonstrate more than 100 GHz of cut-off frequency [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

Performance analysis of undoped cylindrical gate all around (GAA) MOSFET at subthreshold regime

Jena

Pradhan

Dash

et al. 2015

Adv. Nat. Sci: Nanosci. Nanotechnol.

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In this work the sensitivity of process parameters like channel length (L), channel thickness (t Si ), and gate work function (φ M ) on various performance metrics of an undoped cylindrical gate all around (GAA) metal-oxide-semiconductor field effect transistor (MOSFET) are systematically analyzed. Undoped GAA MOSFET is a radical invention as it introduces a new direction for transistor scaling. In conventional MOSFET, generally the channel doping concentration is very high to provide high on-state current, but in contrary it causes random dopant fluctuation and threshold voltage variation. So, the undoped nature of GAA MOSFET solves the above complications. Hence, we have analyzed the electrical characteristics as well as the analog/RF performances of undoped GAA MOSFET through Sentaurus device simulator.

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Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET

Cited by 35 publications

References 12 publications

Control of Short-Channel Effects in Nano DG MOSFET Using Gaussian-Channel Doping Profile

Control of Short-Channel Effects in Nano DG MOSFET Using Gaussian-Channel Doping Profile

Effect of underlap length variation on DC/RF performance of dual material cylindrical MOS

Performance analysis of undoped cylindrical gate all around (GAA) MOSFET at subthreshold regime

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