A model for phosphosilicate glass deposition via POCl3 for control of phosphorus dose in Si

Lee

Progress in Photovoltaics

et al. 2019

This study proposes a hybrid solar cell structure for a highly efficient silicon solar cell obtained by combining two passivating contact structures, namely, a heterojunction and polysilicon passivating contact. Given that the major cause of the loss in efficiency of crystalline silicon solar cells is carrier recombination at the metal‐semiconductor junction, a passivating contact having high‐quality passivation and a low contact resistance was introduced. In this study, two major passivating contact solar cells were combined. By applying an intrinsic thin amorphous silicon layer at the front and a tunneling oxide at the rear, a hybrid silicon solar cell with an efficiency of 21.8% was fabricated. Moreover, to evaluate the potential efficiency limit and to suggest methods for improving the cell performance of the proposed amorphous silicon emitter tunnel oxide back contact structure, the cell efficiency was simulated, and the result indicated that an efficiency of 26% could be achieved by controlling the thickness and resistivity of the wafer.

Section: Resultsmentioning

confidence: 99%

Tunnel oxide passivating electron contacts for high‐efficiency n‐type silicon solar cells with amorphous silicon passivating hole contacts

Lee

Progress in Photovoltaics

et al. 2019

Phys. Status Solidi RRL

“…A pre‐grown SiO 2 layer was found to retard P diffusion . As an interfacial SiO 2 layer was identified between PSG and Si, these findings probably led to the diffusion barrier assumption where the interfacial SiO 2 , due to Reactions (2) and (3) especially under an oxidising ambient, retards P diffusion.…”

Section: Gas Flow Settings For the Four Phosphorus Doping Profiles Dumentioning

confidence: 95%

“…Under an elevated temperature, SiO 2 and P 2 O 5 forms the phosphosilicate glass (PSG):

x S i {normalO}_{2} + {y P}_{2} {normalO}_{5} \to x true({normalS normali normalO}_{2} true) \cdot y ({normalP}_{2} {normalO}_{5})

…”

Section: Gas Flow Settings For the Four Phosphorus Doping Profiles Dumentioning

confidence: 99%

An Advanced Qualitative Model Regarding the Role of Oxygen During POCl₃ Diffusion in Silicon

Hameiri

et al. 2017

POCl3 diffusion has seen decades of research interest and industrial applications. However, further understanding is required for the correlation between the increasing oxygen flow and decreasing inactive phosphorus concentration. In this study, we consider a “free phosphorus oxidation” reaction for a consistent explanation of results in the literature. For verification, four phosphorus doping profiles are fabricated with different oxygen flows during pre‐deposition and drive‐in. Secondary ion mass spectrometry and X‐ray photoelectron spectroscopy are performed on these profiles, with a particular attention to the relative concentrations within the phosphosilicate glass. From experimental results, we not only confirm this reaction, but also present an advanced qualitative model to unlock the fundamental mechanisms during POCl3 diffusion.

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)

“…To compensate for the reduced front surface concentration, the diffusion depth is increased from 300 to 600 nm. This is accomplished by phosphosilicate glass (PSG) oxygen dilution followed with a higher temperature drive-in [2]. Fig.…”

Section: A Reduced Recombination In the Emittermentioning

confidence: 99%

Front-side Ag contacts enabling superior recombination and fine-line performance

Burrows

Meisel

Balakrishnan

et al. 2013