2011
DOI: 10.1109/jssc.2011.2162186
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A Miniature 2 mW 4 bit 1.2 GS/s Delay-Line-Based ADC in 65 nm CMOS

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Cited by 59 publications
(26 citation statements)
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“…where C is the capacitance at the charging node, V T is the switching threshold voltage of the inverter, T 0 is the extra delay caused by the invert and I (v in ) is the current controlled by v in [14,17,20]. For short-channel MOSFETs Table 2 The products among the bits of the 3-bit gray code…”
Section: Delay-line Based Adcsmentioning
confidence: 99%
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“…where C is the capacitance at the charging node, V T is the switching threshold voltage of the inverter, T 0 is the extra delay caused by the invert and I (v in ) is the current controlled by v in [14,17,20]. For short-channel MOSFETs Table 2 The products among the bits of the 3-bit gray code…”
Section: Delay-line Based Adcsmentioning
confidence: 99%
“…In the literature, voltage-based ADCs, which include flash, pipeline and successive approximation (SAR) ADCs, have been widely studied for various applications [1-3, 5, 10, 11, 18, 19, 21]. However, with advances in process technology, voltage-based ADCs cannot be scaled down in terms of power and speed as can digital circuits [17]. Flash ADCs usually use a small feature size to reduce the power consumption with a higher sampling rate.…”
Section: Introductionmentioning
confidence: 99%
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“…Time-domain analog-to-digital conversion techniques, which include the voltage-to-time-to-digital approach and the voltage-to-delay-to-digital approach have recently become attractive, especially for deep submicron technologies [1], [2], [12]. The voltage-to-time-to-digital conversion utilizes a voltage-to-time converter and a time-to-digital converter (TDC) to digitalize input signal, shown in Figure 1(a).…”
mentioning
confidence: 99%