A micromachining technology for integrating low-loss GHz RF passives on non-high-resistivity low-cost silicon MCM substrate

Micromachined high-performance RF passives in CMOS substrate

“…Such pre-CMOS and post-CMOS combined micromachining processes for high-performance passive filters have been developed in the work of [107]. The fabrication process utilizes high-aspect-ratio trench etching and the refilling out of bulk silicon to obtain a very thick SiO 2 isolation layer, following which a low-cost process for the formation of conductive metal layers and inter-metal dielectrics has been developed for the integration of high Q-value RF passives.…”

“…The designed filter circuit incorporates two parallel LC resonators which are magnetically coupled to each other. With the equivalent circuit shown in figure 30(a), the image-reject filter is optimally designed by modifying the previously reported second-order coupled-resonator Chebyshev-type band-pass filter [107]. A feed-through capacitor (C top ) to bridge the input and output is added for the purpose of introducing two transmission zeros out of both sides of the pass-band [108].…”

Porous Si dielectric parameter extraction for use in RF passive device integration: Measurements and simulations

“…In the last decade, the advances in silicon technology have inspired an important trend towards the integration of RF devices on Si [1], [2]. Several solutions are investigated in this respect, the most important being the use of Si micromachining for the fabrication of free standing structures, used mainly in the fabrication of RF inductors [3], the use of high resistivity (HR) Si that is less lossy at RF than the low resistivity Si [4], the trap-rich HR-Si substrate [5], the HR-SOI substrate [6], or the trap-rich HR-SOI substrate [7] and porous Si (PSi) used as a local substrate on the low resistivity Si substrate [8], [9].…”