Porous Si dielectric parameter extraction for use in RF passive device integration: Measurements and simulations

Abstract

The aim of this paper is to develop a formalism for porous Si dielectric parameter extraction for use in RF passive device design. We show that the extracted dielectric parameters using this formalism can be reliably used to simulate the experimental behavior of coplanar waveguides and inductors. In this respect we have fabricated RF devices on porous Si, extracted the dielectric parameters of the porous Si layer and used these parameters to simulate different RF devices, which are fabricated on the same type of material and tested experimentally. By comparing the simulations with the measurements a very good agreement is achieved.

Dielectric properties of porous silicon for use as a substrate for the on-chip integration of millimeter-wave devices in the frequency range 140 to 210 GHz

“…The method followed was the two-line method, using the measured S-parameters of two lines with different length (8 mm and 500 μm) [ 18 ]. The characteristic impedance, the propagation constant, and the effective permittivity of the lines were extracted and used to derive the dielectric parameters of the PSi substrate [ 13 , 14 ].…”

“…By integrating CPW TLines on top of porous Si and measuring their S-parameters, we extract porous Si dielectric parameters by combining the experimental results with electromagnetic simulations and conformal mapping calculations. This method has been described in detail in [ 13 , 14 ], and the results have been proven to be in very good agreement with full-wave EM simulations [ 14 ].…”

“…By combining these measurements with electromagnetic simulations, the dielectric permittivity and loss tangent of the substrate (porous Si) can be obtained. This method has been previously used by the authors to extract the dielectric parameters of porous Si in the frequency range 1 to 40 GHz [ 13 , 14 ]. In this work, measurements are extended to the frequency range 140 to 210 GHz.…”