A Micromachined Microwave Switch Fabricated by the Complementary Metal Oxide Semiconductor Post-Process of Etching Silicon Dioxide

Dai, Ching‐Liang; Peng, Hsuan-Jung; Liu, Mao-Chen; Wu, Chyan-Chyi; Hsu, Hsiang-Han; Yang, Lung‐Jieh

doi:10.1143/jjap.44.6804

Cited by 29 publications

(20 citation statements)

References 24 publications

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“…Pull-down voltage (V) Ramadoss et al (2003) 90-100 Yao et al (1999) 5 0 Chang et al (2003) 3 5 Firebaugh et al (2004) 3 0 Hyman et al (1999) 3 0 Chang et al (2000) 2 1 Zheng et al (2005) 1 7 Dai et al (2005b) 1 7 Chen et al (2001) 1 7 Plotz et al (2001) 1 0 Park et al (2000) 8 Hah et al (2000) 6 Type-c of this work 7 …”

Section: Typesmentioning

confidence: 91%

“…Zheng et al (2005) also used the surface micromachining process to fabricate an RF switch on GaAs substrate. The actuation voltage of the switch was 17 V. The switching voltage was 21 V. Dai et al (2005b) used a post-CMOS process to fabricate a microwave switch that needed an actuation voltage of 17 V. Chen et al (2001) utilized a micro assembly transfer technique to manufacture a microwave switch. The switch had an actuation voltage of 17 V.…”

Section: Introductionmentioning

confidence: 99%

“…Isolation of type-b switch in 'offet al (2005),Dai et al (2005b) andChen et al (2001) had the same pull-down voltage of 17 V. The switches manufactured byPlotz et al (2001),Park et al (2000) andHah et al (2000) had low actuation voltages of 10, 8 and 6 V, respectively. By comparing with the above literature, type-c switch in this work is a switch of low actuation voltage.A MEMS motion analyzer (MMA G2 TM , produced by Umech Technologies, LLC.…”

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confidence: 99%

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Low voltage actuated RF micromechanical switches fabricated using CMOS-MEMS technique

Dai

Chen

2006

Microsyst Technol

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This study investigates the fabrication of radio frequency (RF) micromechanical switches with low actuation voltage using the commercial 0.35 mu m double polysilicon four metal (DPFM) complementary metal oxide semiconductor (CMOS) process and the post-process. The advantages of RF micromechanical switches include low pull-down voltage and ease of post-processing. Three types of RF micromechanical switches are designed and manufactured. The RF switches are capacitive type, and the structures of the switches comprise coplanar waveguide (CPW) transmission lines, supported springs and a suspended membrane. The post-process requires only a wet etching silicon dioxide layer. Experimental results show that type-c switch needs only a pull-down voltage of 7 V

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Section: Typesmentioning

confidence: 91%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Low voltage actuated RF micromechanical switches fabricated using CMOS-MEMS technique

Dai

Chen

2006

Microsyst Technol

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“…First, the etching (RLS) holes have been opened, and silicon excavated by post dry etching process, which is called as RLS by CIC in Taiwan. Because BOE can etch aluminum layer in addition to silicon dioxide, so we choose Silox Vapox Imf [8] to etch SiO2 as shown in Fig. 2(b).…”

Section: Experimental Methods 21 Principle Of Switchmentioning

confidence: 99%

Using Residual Stresses to Develop CMOS-compatible RF MEMS Switches

Huang

2006

2006 International Conference on Electronic Materials and Packaging

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This research presents a novel MEMS-switches that fabricated with CMOS and post-process techniques of MEMS. This switch includes a controllable cantilever beam and static electrode. The switch is driven by using electrostatic force. So far, the pull-in voltage of MEMS switch is too large to combine with CMOS circuit chip. In addition, the residual stress produced from CMOS process will cause a large deflection of cantilever beam. Therefore, in this research, we use CoventorWare to inspect the feasibility about deflection of cantilever beam that caused by residual stress. Accordingly, we make use of deflection of cantilever beam as the principle of design. The cantilever beam is set in the reverse direction. And, a blocking layer can be used to constrain deflection of cantilever beam to diminish the pull-in voltage. Subsequently, the pull-in voltage can be reached below 3.3V. By defining the region of etching holes (RLS) preliminarily, silicon beneath could be excavated to reduce substrate loss and increase isolation. Only one etching process is needed in post-process to release the cantilever beam. Finally, we use thick photoresist to complete self-packaging to lower down the cost of chip fabrication. The advantages of this MEMS switch are as follows: small area, low pull-in voltage, uncomplicated fabrication, and compatible with CMOS process. We only use via layer, metal layer and poly layer of TSMC 0.35um 2P4M CMOS process to fabricate our design.

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“…The advantage of micromechanical switches fabricated by the CMOS-MEMS technique is the capability for integration with RF circuits in the system-on-a-chip (SOC) application. We had used the CMOS-MEMS technique to develop a micromechanical switch [9] on silicon substrate. In this work, series inductors are integrated with the micromechanical switch [9] for improving its performance.…”

Section: Introductionmentioning

confidence: 99%

Modeling and Manufacturing of Micromechanical RF Switch with Inductors

Dai

Chen

2007

Sensors

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This study presents the simulation, fabrication and characterization of micromechanical radio frequency (RF) switch with micro inductors. The inductors are employed to enhance the characteristic of the RF switch. An equivalent circuit model is developed to simulate the performance of the RF switch. The behaviors of the micromechanical RF switch are simulated by the finite element method software, CoventorWare. The micromechanical RF switch is fabricated using the complementary metal oxide semiconductor (CMOS) and a post-process. The post-process employs a wet etching to etch the sacrificial layer, and to release the suspended structures of the RF switch. The structure of the RF switch contains a coplanar waveguide (CPW), a suspended membrane, eight springs and two inductors in series. Experimental results reveal that the insertion loss and isolation of the switch are 1.7 dB at 21 GHz and 19 dB at 21 GHz, respectively. The driving voltage of the switch is about 13 V.

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A Micromachined Microwave Switch Fabricated by the Complementary Metal Oxide Semiconductor Post-Process of Etching Silicon Dioxide

Cited by 29 publications

References 24 publications

Low voltage actuated RF micromechanical switches fabricated using CMOS-MEMS technique

Low voltage actuated RF micromechanical switches fabricated using CMOS-MEMS technique

Using Residual Stresses to Develop CMOS-compatible RF MEMS Switches

Modeling and Manufacturing of Micromechanical RF Switch with Inductors

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