A microchannel avalanche photodiode with a fast recovery time of parameters

Sadygov, Z.; Abdullaev, Kh.; Анфимов, Н.; Ахмедов, Ф.; Madatov, R. S.; Mukhtarov, R. I.; Olshevski, A. G.; Титов, А. И.

doi:10.1134/s1063785013060114

Cited by 7 publications

(9 citation statements)

References 5 publications

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“…With various scintillation [2], [4]- [7]. It allows the device high density of pixel for providing wide region of photoresponse linearity to be created [3]. For mentioned structures in the course of avalanche process the part of multiplied charge accumulates in potential well of pixel and runs down the substrate after passing main charge of avalanche.…”

Section: Introductionmentioning

confidence: 99%

“…As it is noted in [1], [3] MAPD structures run in the regime of avalanche multiplication of carriers when the positive potential is applied to n-Si substrate. To enlarge the field of use of given devices and to reveal inertial process mechanism in them there have been investigated reaction properties of structures by applying negative potential to nSi substrate.…”

Section: Introductionmentioning

confidence: 99%

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Negative Capacitance on Silicon Avalanche Photodiodes with Deeply Buried Micropixels

Jafarova

Sadygov

Dovlatov

et al. 2018

EJERS

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There have been investigated reactive properties of silicon avalanche photodiodes (MAPD- Micropixel Avalanche Photodiode) with deeply buried micropixels (amplification channels) within AC signal frequencies f= (50-500) kHz.By experiment is found out that measured capacitance of structures involving three p-n junctions in section passing through the pixels increases exponentially with Ufor (negative potential is applying to n-Si substrate) reaches maximum and at certain value Ufor= Uinv changes the sign becoming the negative capacitance (equivalent inductance).The magnitude of active component of complete conduction G grows with the applied voltage and reaches maximum value ~70 mS at Ufor= 1,0 V (f=500 kHz). There has been calculated difference in phase j appearing between current and voltage and it is shown that at Ufor=0 V the j = 80o and passes through the zero at Ufor = 0,55 V. The magnitude of negative capacitance recalculated to the inductance value with the growth of forward bias being decreased sharply tends to the saturation.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Negative Capacitance on Silicon Avalanche Photodiodes with Deeply Buried Micropixels

Jafarova

Sadygov

Dovlatov

et al. 2018

EJERS

View full text Add to dashboard Cite

show abstract

“…As it is noted in [1,3] MAPD structures run in the regime of avalanche multiplication of carriers when the positive potential is applied to n-Si substrate. To enlarge the field of use of given devices and to reveal inertial process mechanism in them there have been investigated reaction properties of structures by applying negative potential to n-Si substrate.…”

Section: Introductionmentioning

confidence: 99%

“…It allows the device high density of pixel for providing wide region of photoresponse linearity to be created [3]. For mentioned structures in the course of avalanche process the part of multiplied charge accumulates in potential well of pixel and runs down the substrate after passing main charge of avalanche.…”

Section: Introductionmentioning

confidence: 99%

The Equivalent Inductance Silicon Micro-Pixel Avalance Photodiodes

Jafarova¹,

Sadygov²,

Dovlatov³

et al. 2017

IOSR JEN

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“…MAPD construction involves pixel matrix of individual n + -regions of 2-5 µ in diameter deeply buried into epitaxial layer of Si p-type conductivity grown on the surface of n-type Si substrate [1,2,[4][5][6][7]. It allows the device high density of pixel for providing wide region of photoresponse linearity to be created [3]. For mentioned structures in the course of avalanche process the part of multiplied charge accumulates in potential well of pixel and runs down the substrate after passing main charge of avalanche.…”

mentioning

confidence: 99%

Inductive Type Impedance of High Sensitivity Silicon Avalanche Photodiodes with Deeply Buried Micropixels

Jafarova¹,

Sadygov²,

Dovlatov³

et al. 2017

JEE

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There have been investigated reactive properties of silicon avalanche photodiodes (MAPD-micropixel avalanche photodiode) with deeply buried micropixels (amplification channels) within AC signal frequencies f = 50-500 kHz. By experiment it is found out that measured capacitance of structures involving three p-n junctions in section passing through the pixels increases exponentially with U for (negative potential is applying to n-Si substrate) reaches maximum and at certain value U for = U inv changes the sign becoming the negative capacitance (equivalent inductance). The magnitude of active component of complete conduction G grows with the applied voltage and reaches maximum value ~70 mS at U for = 1.0 V (f = 500 kHz). There has been calculated difference in phase  appearing between current and voltage and it is shown that at U for = 0 V the  = 80 o and passes through the zero at U for = 0.55V. The magnitude of negative capacitance recalculated to the inductance value with the growth of forward bias being decreased sharply tends to the saturation.

show abstract

A microchannel avalanche photodiode with a fast recovery time of parameters

Cited by 7 publications

References 5 publications

Negative Capacitance on Silicon Avalanche Photodiodes with Deeply Buried Micropixels

Negative Capacitance on Silicon Avalanche Photodiodes with Deeply Buried Micropixels

The Equivalent Inductance Silicon Micro-Pixel Avalance Photodiodes

Inductive Type Impedance of High Sensitivity Silicon Avalanche Photodiodes with Deeply Buried Micropixels

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