Abstract:There have been investigated reactive properties of silicon avalanche photodiodes (MAPD- Micropixel Avalanche Photodiode) with deeply buried micropixels (amplification channels) within AC signal frequencies f= (50-500) kHz.By experiment is found out that measured capacitance of structures involving three p-n junctions in section passing through the pixels increases exponentially with Ufor (negative potential is applying to n-Si substrate) reaches maximum and at certain value Ufor= Uinv changes the sign becomin… Show more
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