Design and physical operation principles of new microchannel avalanche photodiode (MC APD) with gain up to 10 5 and linearity range improved an order of magnitude compared to known similar devices. A distinctive feature of the new device is a directly biased p-n junction under each pixel which plays role of an individual quenching resistor. This allows increasing pixel density up to 40000 per mm 2 and making entire device area sensitive.
There has been investigated the capacitance of silicon micro pixel avalanche photodiodes (MAPD 3N) with deeply buried pixels under the effect of weak AC signal of different frequency (from 10 kHz to 1 MHz). A decreasing of the barrier capacitance with an increasing of AC signal frequency has been observed when small DC bias voltage (0-3 V) is applied to the structure. With the rise of voltage the observed dependence weakens and further saturates. It is established that capacity behavior like this within small voltage is referred to the peculiarity of MAPD structure under the investigation: presence of matrix of n +-regions between two epitaxial layers of p-type conductivity results in the appearance of some effective resistance between these layers connected in series with the measured capacity depending on AC signal frequency. The calculated values of ionized acceptor concentration from the slope of the dependence C-2 (U bias) in epitaxial layer are: N A1 = (2.4 ±0.3)•10 20 m-3 for U bias up to 3 V, N A2 = (1.08±0.05)•10 21 m-3 for U bias from 3 to 10 V and N A3 = (2.13±0.27)• 10 21 m-3 for U bias from 10 to 20 V respectively.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.