A micro-power high-resolution &amp;#x03A3;&amp;#x0394; CMOS temperature sensor

Hacine, Souha; Khach, Tarik El; Mailly, F.; Latorre, Laurent; Nouet, Pascal

doi:10.1109/icsens.2011.6127123

Cited by 6 publications

(3 citation statements)

References 5 publications

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“…Since the desired temperature range is small (20°C), the resistance change in the R n branch will also be small, and a large parallel resistor (R pDAC ≈ 18•R p ) is required to balance the bridge. To save area, a series DAC is used [9], which requires a much smaller (R pDAC ≈ R p /18) resistor (Fig. 1 In this case, μ can be expressed as:…”

Section: A Wheatstone Bridge and Series Rdacmentioning

confidence: 99%

A 6.6-μW Wheatstone-Bridge Temperature Sensor for Biomedical Applications

Pan

Makinwa

2020

IEEE Solid-State Circuits Lett.

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This paper presents a compact, energy-efficient and low-power Wheatstone bridge temperature sensor for biomedical applications. To maximize sensitivity and reduce power dissipation, the sensor employs a high-resistance (600k) bridge that consists of resistors with positive (silicided-poly) and negative (n-poly) temperature coefficients. Resistor spread is then mitigated by trimming the n-poly arms with a 12-bit DAC, which consists of a 5-bit series DAC whose LSB is trimmed by a 7-bit PWM generator. The bridge is readout by a 2 nd -order delta-sigma modulator, which dynamically balances the bridge by tuning the resistance of the silicided-poly arms via a 1-bit series DAC. As a result, the modulator's bitstream average is an accurate and near-linear function of temperature, which does not require further correction in the digital domain. Fabricated in a 180nm CMOS technology, the sensor occupies 0.12mm 2 . After a 1-point trim, it achieves +0.2°C/−0.1°C (3σ) inaccuracy in a ±10°C range around body temperature (37.5°C). It consumes 6.6μW from a 1.6V supply, and achieves 200μK resolution in a 40ms conversion time, which corresponds to a state-of-the-art resolution FoM of 11fJ•K 2 . Duty-cycling the sensor results in even lower average power: 700nW at 10 conversions/s.

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Section: A Wheatstone Bridge and Series Rdacmentioning

confidence: 99%

A 6.6-μW Wheatstone-Bridge Temperature Sensor for Biomedical Applications

Pan

Makinwa

2020

IEEE Solid-State Circuits Lett.

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“…4) Analog-to-Digital and Digital-to-Analog Converters: Two additional IP blocks have been considered for processing analog signals. On the one hand, a 1-bit delta-sigma analog function is proposed where the active bridge is used in a feedback structure to convert a relative variation of resistance into a digital word [6]. A frequency divider, whose configuration is stored in STT-MTJs, is implemented to control the sampling rate and therefore the signal bandwidth.…”

Section: B Stt-mtj Based Ip Blocksmentioning

confidence: 99%

From Spintronic Devices to Hybrid CMOS/Magnetic System On Chip

Senni

Ouattara

Modad

et al. 2018

2018 IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC)

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Beyond CMOS" is today one of the major research directions in semiconductor industries to address current integrated circuit issues. Many alternative technologies are currently under investigation to deal with the scaling limits of CMOS technology. This paper presents the design of a full system on chip based on a hybrid CMOS/Magnetic process. Spin-transfertorque magnetic tunnel junctions are used to design different functions such as logic, memory, security and analog IP blocks.

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“…In this case, multiple pins are required for the sensor interface, which demand more IC PADs, increase IC area and cost, and make connectivity and PCB more complex. Reference [13] presents a temperature sensor with high-resolution first order sigma-delta modulator (SDM). This design provides a single line digital stream.…”

Section: Introductionmentioning

confidence: 99%

Design of a Low-Power, Small-Area AEC-Q100-Compliant SENT Transmitter in Signal Conditioning IC for Automotive Pressure and Temperature Complex Sensors in 180 Nm CMOS Technology

Ali

Rikhan

Kim

et al. 2018

Sensors

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In this paper, a low-power and small-area Single Edge Nibble Transmission (SENT) transmitter design is proposed for automotive pressure and temperature complex sensor applications. To reduce the cost and size of the hardware, the pressure and temperature information is processed with a single integrated circuit (IC) and transmitted at the same time to the electronic control unit (ECU) through SENT. Due to its digital nature, it is immune to noise, has reduced sensitivity to electromagnetic interference (EMI), and generates low EMI. It requires only one PAD for its connectivity with ECU, and thus reduces the pin requirements, simplifies the connectivity, and minimizes the printed circuit board (PCB) complexity. The design is fully synthesizable, and independent of technology. The finite state machine-based approach is employed for area efficient implementation, and to translate the proposed architecture into hardware. The IC is fabricated in 1P6M 180 nm CMOS process with an area of (116 μm × 116 μm) and 4.314 K gates. The current consumption is 50 μA from a 1.8 V supply with a total 90 μW power. For compliance with AEC-Q100 for automotive reliability, a reverse and over voltage protection circuit is also implemented with human body model (HBM) electro-static discharge (ESD) of +6 kV, reverse voltage of −16 V to 0 V, over voltage of 8.2 V to 16 V, and fabricated area of 330 μm × 680 μm. The extensive testing, measurement, and simulation results prove that the design is fully compliant with SAE J2716 standard.

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A micro-power high-resolution ΣΔ CMOS temperature sensor

Cited by 6 publications

References 5 publications

A 6.6-μW Wheatstone-Bridge Temperature Sensor for Biomedical Applications

A 6.6-μW Wheatstone-Bridge Temperature Sensor for Biomedical Applications

From Spintronic Devices to Hybrid CMOS/Magnetic System On Chip

Design of a Low-Power, Small-Area AEC-Q100-Compliant SENT Transmitter in Signal Conditioning IC for Automotive Pressure and Temperature Complex Sensors in 180 Nm CMOS Technology

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