A Method for the Accurate Comparison of Lattice Parameters

Bowen, D. K.; Tanner, B. K.

doi:10.1107/s0021889895006297

Cited by 12 publications

(3 citation statements)

References 11 publications

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“…Often the most convenient internal standard is the x-ray wavelength since this exists on all laboratory sources with characteristic radiation, Bond (1960). However, comparative methods can be used provided a good reliable standard is obtained, Bowen and Tanner (1995). The method of Bond (1960) has been exploited by Bartels (1984) in combination with a low divergence dispersive monochromator and by Fewster (1982) in a 'reverse' double-crystal diffractometer to resolve the layer and substrate reflections.…”

Section: R =mentioning

confidence: 99%

X-ray analysis of thin films and multilayers

Fewster

1996

Rep. Prog. Phys.

135

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X-ray diffraction is sensitive to thin films of atomic dimensions to thicknesses of many tens of microns, by virtue of the x-ray wavelengths employed and the very high diffractionspace resolutions attainable. X-ray methods are generally non-destructive, in that sample preparation is not required, and they can provide a very appropriate route to obtain structural information on thin films and multilayers. Analysis can be performed across the whole spectrum of material types from perfect single crystals to amorphous materials. The choice of the x-ray diffraction analysis procedure depends on the quality of the structural form and therefore this review has been organized to reflect this. Following a description of the various material types, some typically important material parameters have been given arising from the application areas. These material parameters relating to the structure are then categorized into macroscopic and microscopic properties which can then be further subdivided and correlated to the most appropriate analysis method. It is clear from this that x-ray analysis covers the whole range and from this the recent developments will become clear. It is intended therefore that the reader is not compelled to read from beginning to end, but rather be able to find the structural parameter of interest to him/her in a simple way and from that discover the various approaches to its determination.

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Section: R =mentioning

confidence: 99%

X-ray analysis of thin films and multilayers

Fewster

1996

Rep. Prog. Phys.

135

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“…The interplanar spacing d and the difference in orientation Ap can be obtained from the peak separations Ao91, 2 in both rocking curves. This method is very similar to the comparison technique described by Bowen & Tanner (1995), with the difference being that the GaAs substrate acts as the reference crystal. Therefore, the assessment of errors given there can be used.…”

Section: Determination Of the Interplanar Spacingsmentioning

confidence: 99%

Determination of the Deformation State of (Zn,Mn)Se/ZnSe Multilayers

Schäfer¹,

Thi²,

Köhler³

1998

J Appl Cryst

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High-resolution X-ray diffraction is commonly used to measure the misfit strain and to determine the unstrained lattice parameter of epitaxic semiconductor layers assuming tetragonal distortion. In this paper a method is developed which links the measured peak separations in X-ray rocking curves to the strain tensor without an assumption of a layer symmetry. For the system (Zn,Mn)Se on thick ZnSe buffer layers deposited by MBE (molecular beam epitaxy) on GaAs substrate, the six components of the reciprocal metric tensor of each layer were determined by a least-squares algorithm from a set of 12 different reciprocal-lattice vectors. A principal-axis transformation of the calculated strain tensor of the (Zn,Mn)Se layer shows that the deformation in the interface plane nearly parallel to the [110] and [110] directions differs by more than 15%. The different critical thicknesses for the relaxation in these two directions are determined to be 36 and 87 nm, respectively. The deviation from tetragonal symmetry is a function of the epilayer thickness and reaches a maximum at about 200 nm.

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“…There is a clear need for experimental techniques that can measure and map localised strain distributions at the nanoscale. X-ray [1] and neutron diffraction [2] techniques provide excellent strain sensitivity but lack the required spatial resolution even when synchrotron sources are employed [3]. Several spectroscopic methods have been used to analyse strain in semiconductor materials, including photo-luminescence (PL) [4], cathodo-luminescence (CL) [5], and micro-Raman [6,7] techniques.…”

Section: Introductionmentioning

confidence: 99%