A method for locating the position of oxide traps responsible for random telegraph signals in submicron MOSFETs

RTS amplitudes in decananometer MOSFETs: 3-D simulation study

“…With few exceptions [9] the recent experimental studies of RTS in MOSFETs, focusing on devices with dimensions larger than 100 nm [8], [15]- [17], lag the current scaling trends. Modeling and simulation can help to forecast the RTS amplitudes that should be expected in decananometer devices.…”

Extraction of trap energy and location from random telegraph noise in gate leakage current (Ig RTN) of metal–oxide semiconductor field effect transistor (MOSFET)

“…4a and b. The tendency with the gate bias is opposite to other reported cases in which the trapped electron comes from the inversion channel [4][5][6][7]. There are two possibilities for the opposite behavior with the gate voltage.…”

“…Both time constants provide useful information about trap such as its location and energy level, because they depend on gate and drain voltages. Considerable research on the extraction of trap position in oxide has been performed due to its importance in characterizing gate oxide properties [4][5][6][7].…”

Ultra Low Noise CMOS Image Sensors

“…Advances in the process technologies allowed manufacturing tiny MOS transistors with deepsub-micron gate widths and lengths featuring single traps. The study of tiny transistors featuring RTS noise showed that the drain current switching events correspond exactly to the carriers emission and release and bias voltage dependence of the this phenomenon allows the calculation of the distance separating the conducting channel from the traps in the insulator as well as their lateral position in the channel [74,75,76,77]. The depths of the traps have been estimated to be in the order of a few nm [74] which allows tunneling between the inversion layer and traps in the insulator.…”