A Memristor SPICE Model Accounting for Volatile Characteristics of Practical ReRAM

Phenomenological modeling of memristive devices

“…The advantage of such equivalent circuit is that it naturally bounds the device resistance and provides physically plausible switching behavior of the device near extreme on and off states. Additionally, the equivalent circuit can be extended to include secondary volatile switching behavior [5,10,30,33,34] and electronic noise [14]. Finally, a practical way to include switching variations is to modify parameter f in the model, for example, by adding a zero-mean Gaussian random variable to mimic device-to-device and cycle-to-cycle variations.…”

A Data-Driven Verilog-A ReRAM Model

“…where 1 (for (12), (13)) and 10 (for (14)). The specific parameter values for and where chosen so as to retain the models dynamics practically unaffected and at the same time facilitate the simulator to produce solutions adequately fast.…”

“…In probably every SPICE memristor model published so far [10], [11], [12], [13], [20], [21] the memory effect of the memristor is modelled via a feedback controlled integrator circuit where the value of the device's state variable is represented by the voltage across a unitary capacitance which serves as an integrator of the internal state variable function. We follow a similar approach in the presented VA implementation in the sense that our model also captures RS evolution by assigning this on an internal voltage node.…”

“…As ReRAM technology matures, a need develops for: a) automated testing routines intended to accelerate the process development cycle [7], [9] and b) robust computer models enabling informed memristor-based system design before committing to silicon. To date, several empirical and semi-empirical models have been published accounting for either only non-volatile [10], [11] or both volatile and non-volatile behaviours [12], [13]. The majority of the published compact memristor models are SPICE models and although helpful guidelines for accurate and reliable modelling of memristors in the SPICE environment have been published [14], the fact remains that such models lack industrial multi-simulator compatibility.…”

Modeling and simulation of large memristive networks

“…Real memristive devices usually comprise several nonvolatile and volatile switching mechanisms [10], which require a higher order of the differential equation of motion. This class includes model [22] and more recent works [23][24][25] for TiO 2 , WO x , and TaO x memristors.…”