A Low-Voltage and Low-Power CMOS Temperature Sensor Circuit with Digital Output for Wireless Healthcare Monitoring System

Setiabudi, Agung; Sakamoto, Ryota; Tamura, H.; Tanno, Koichi

doi:10.1109/ismvl.2016.53

Cited by 3 publications

(2 citation statements)

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“…These require large chip areas. A low voltage and low power temperature sensor circuit with digital output for health care monitoring system has been proposed in [14]. This sensor can achieve low voltage, low power, high sensitivity and high resolution.…”

Section: Introductionmentioning

confidence: 99%

“…However, this sensor is special for health care monitoring system whose temperature range only 33°C to 45°C, and it can not to be used for other biomedical applications with different temperature range. This paper proposes a new temperature sensor circuits based on previous work [14] with addition of programmable temperature range digitalization. In this paper, the analysis of the circuits, simulation results and the measurement of fabricated temperature sensor core are reported in detail.…”

Section: Introductionmentioning

confidence: 99%

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CMOS Temperature Sensor with Programmable Temperature Range for Biomedical Applications

Setiabudi¹,

Tamura²,

Tanno³

2018

IJECE

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<div class="page" title="Page 1"><div class="layoutArea"><div class="column"><p class="p1"><span class="s1">A CMOS temperature sensor circuit with programmable temperature range is proposed for biomedical applications. The proposed circuit consists of temperature sensor core circuit and programmable temperature range digital interface circuit. Both circuits are able to be operated at 1.0 V. The proposed temperature sensor circuit is operated in weak inversion region of MOSFETs. The proposed digital interface circuit converts current into time using Current-to-Time Converter (ITC) and converts time to digital data using counter. Temperature range can be programmed by adjusting pulse width of the trigger and clock frequency of counter. The proposed circuit was simulated using HSPICE with 1P, 5M, 3-wells, 0.18-μm CMOS process (BSIM3v3.2, LEVEL53). From the simulation of proposed circuit, temperature range is programmed to be 0 °C to 100 °C, it is obtained that resolution of the proposed circuit is 0.392 °C with -0.89/+0.29 °C inaccuracy and the total power consumption is 22.3 μW in 25 °C.<span class="Apple-converted-space"> </span></span></p></div></div></div>

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%