A low-temperature bonding method for high power device packaging based on In-infiltrated nanoporous Cu

Enhancement and Mechanism of Copper Nanoparticle Sintering in Activated Formic Acid Atmosphere at Low Temperature

“…Recently, wide band-gap semiconductors materials, such as SiC and GaN, are becoming very promising in the development of power electronic devices. 1,2 One of the most attractive features of wide band-gap semiconductor power devices is that they exhibit excellent physical properties even at high temperatures above 250 °C, which also brings new requirements on the die attach materials, such as high service-temperature, high thermal conductivity and high reliability. 1,3 Sn-based solders with low melting point are prone to failure under the harsh conditions.…”

“…1,2 One of the most attractive features of wide band-gap semiconductor power devices is that they exhibit excellent physical properties even at high temperatures above 250 °C, which also brings new requirements on the die attach materials, such as high service-temperature, high thermal conductivity and high reliability. 1,3 Sn-based solders with low melting point are prone to failure under the harsh conditions. 4 However, conventional high temperature solders, such as Au-Sn, 5 Zn-Al, 6 Zn-Sn, 7 have their own unavoidable drawbacks, such as high melting point, high cost, poor thermal conductivity, and poor corrosion resistance, which hinder their extensive applications.…”