2021
DOI: 10.1149/2162-8777/abfd4a
|View full text |Cite
|
Sign up to set email alerts
|

Enhancement and Mechanism of Copper Nanoparticle Sintering in Activated Formic Acid Atmosphere at Low Temperature

Abstract: Cu nanoparticle paste has become one of the alternative materials for conventional high-temperature packaging, but this sintering process is significantly inhibited by copper oxides. In this paper, the activated formic acid atmosphere was used to achieve high-strength Cu–Cu bonding at low temperature. When sintered at a temperature of 275 °C for 30 min with a pressure of 5 MPa, a shear strength of more than 70 MPa was achieved. In contrast to formic acid atmosphere, the hydrogen radicals generated by activated… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 13 publications
(1 citation statement)
references
References 33 publications
0
1
0
Order By: Relevance
“…Recent advances in power electronics, including spacecraft, renewable energy vehicles, and high-speed trains, have propelled the demand for electronic packaging towards smaller, faster, and more efficient designs that are suitable for use in harsh conditions. The applications of wide-bandgap (WBG) semiconductors, such as SiC and GaN, continue to expand due to their advanced properties in severe conditions, typically involving temperatures of around 250 °C [ 4 , 5 ]. Consequently, there is a need for die-attach materials that can endure long periods of exposure to temperatures close to or even exceeding 250 °C.…”
Section: Introductionmentioning
confidence: 99%
“…Recent advances in power electronics, including spacecraft, renewable energy vehicles, and high-speed trains, have propelled the demand for electronic packaging towards smaller, faster, and more efficient designs that are suitable for use in harsh conditions. The applications of wide-bandgap (WBG) semiconductors, such as SiC and GaN, continue to expand due to their advanced properties in severe conditions, typically involving temperatures of around 250 °C [ 4 , 5 ]. Consequently, there is a need for die-attach materials that can endure long periods of exposure to temperatures close to or even exceeding 250 °C.…”
Section: Introductionmentioning
confidence: 99%