A low loss single-channel SiC trench MOSFET with integrated trench MOS barrier Schottky diode

Yi, Bo; Wu, Zheng; Zhang, Qian; Cheng, Junji; Huang, Haimeng; Pan, YiLan; Zhang, XiaoKun; Xiang, Yong

doi:10.1088/1361-6641/ac01a1

Cited by 9 publications

(3 citation statements)

References 39 publications

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“…Generally, etching processes can either be wet, using aggressive solutions or molten salts, or dry, using ion bombardment or plasma etching. − Plasma etching of SiC already proved to be suitable to get smooth profiles with a high degree of directionality. Using high-density and low-pressure plasmas allows fast anisotropic etching of SiC.…”

Section: Results and Discussionmentioning

confidence: 99%

Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers

et al. 2021

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Silicon carbide power semiconductors overcome some limitations of silicon chips, and therefore, SiC is an attractive candidate for next-generation power electronics. In addition, the number of possible vertical devices that can be obtained on a given surface using the trench technique is significantly larger than that attainable using a planar setup. Moreover, a SiC trench power metal oxide semiconductor field-effect transistor (power MOSFET) structure removes the junction field-effect transistor (JFET) region (that would decrease the current flow width) and improves the channel density, thus reducing the specific electrical resistance. Consequently, in the present study, we report on the chemical bonding state of elements and structural characterization of trenches, obtained using SF 6 -based plasma etching, on the 4H-SiC polytype substrate. An interferometric algorithm that finds the endpoint to stop etching governed the trench depth. Scanning electron microscopy, transmission electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy analyses stated the high quality and uniformity of the trenches. These materials are particularly promising for the fabrication of the SiC MOSFET to be implemented in the manufacturing of power devices.

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Section: Results and Discussionmentioning

confidence: 99%

Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers

et al. 2021

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“…Typically, the simulation results rely on the physical model and the related parameters used in the simulation [26]. Recently, Yi et al [27] illustrated the process of using an appropriate physical model for a realistic simulation and fitting the simulation results with experimental data. Similarly, we calibrated the simulation model based on previously reported experimental data [17] for the performance analysis of the proposed device.…”

Section: Calibrationmentioning

confidence: 99%

High performance 4H-SiC MOSFET with deep source trench

Na¹,

Cheon²,

Kim³

2022

Semicond. Sci. Technol.

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In this study, we invesitaged a 4H-SiC deep source trench metal-oxide semiconductor field-effect transistor (DST-MOSFET) using technology computer-aided design numerical simulations. The proposed DST-MOSFET comprises a P-pillar formed along the DST and a side P+ shielding region (SPR), which replaces the gate trench bottom P+ shielding region. Owing to the superjunction generated by the P-pillar and N-drift region, the static characteristics of the DST-MOSFET were superior to those of the trench gate MOSFET (UMOSFET) and double-trench MOSFET (DT-MOSFET). The specific on-resistance and Baliga’s figure of merit of DST-MOSFET improved by 9% and 104%, respectively, in comparison with those of UMOSFET; and by 37% and 64%, respectively, compared to those of DT-MOSFET. Additionally, the SPR reduced the gate-to-drain capacitance of the DST-MOSFET and improved the switching characteristics. Consequently, the total switching energy loss of the proposed DST-MOSFET reduced by 63% and 47% in comparison with those of the UMOSFET and DT-MOSFET, respectively.

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“…From a device design perspective, thus, the Schottky barrier diode (SBD) integrated in SiC MOSFET was an efficient way to avoid bipolar degradation if the parasitic P-N body diode were opened. Specifically, there are several schemes to fulfill: (1) SiC MOSFET with integrated JBS using a same metal scheme (JBSFET) [14,15], (2) various SiC planar/trench gate MOSFETs with integrated SBD between splitting P base region [16][17][18][19][20][21], and (3) SiC trench MOSFET with integrated SBD at sidewall of trench [22].…”

Section: Introductionmentioning

confidence: 99%

SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode

Deng

et al. 2021

Materials

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A silicon carbide (SiC) trench MOSFET featuring fin-shaped gate and integrated Schottky barrier diode under split P type shield (SPS) protection (FS-TMOS) is proposed by finite element modeling. The physical mechanism of FS-TMOS is studied comprehensively in terms of fundamental (blocking, conduction, and dynamic) performance and transient extreme stress reliability. The fin-shaped gate on the sidewall of the trench and integrated Schottky diode at the bottom of trench aim to the reduction of gate charge and improvement on the third quadrant performance, respectively. The SPS region is fully utilized to suppress excessive electric field both at trench oxide and Schottky contact when OFF-state. Compared with conventional trench MOSFET (C-TMOS), the gate charge, Miller charge, Von at third quadrant, Ron,sp·Qgd, and Ron,sp·Qg of FS-TMOS are significantly reduced by 34%, 20%, 65%, 0.1%, and 14%, respectively. Furthermore, short-circuit and avalanche capabilities are discussed, verifying the FS-TMOS is more robust than C-TMOS. It suggests that the proposed FS-TMOS is a promising candidate for next-generation high efficiency and high-power density applications.

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A low loss single-channel SiC trench MOSFET with integrated trench MOS barrier Schottky diode

Cited by 9 publications

References 39 publications

Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers

Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers

High performance 4H-SiC MOSFET with deep source trench

SiC Fin-Shaped Gate Trench MOSFET with Integrated Schottky Diode

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