Systematic Characterization of Plasma-Etched Trenches on 4H-SiC Wafers

Abstract

Silicon carbide power semiconductors overcome some limitations of silicon chips, and therefore, SiC is an attractive candidate for next-generation power electronics. In addition, the number of possible vertical devices that can be obtained on a given surface using the trench technique is significantly larger than that attainable using a planar setup. Moreover, a SiC trench power metal oxide semiconductor field-effect transistor (power MOSFET) structure removes the junction field-effect transistor (JFET) region (that would decrease the current flow width) and improves the channel density, thus reducing the specific electrical resistance. Consequently, in the present study, we report on the chemical bonding state of elements and structural characterization of trenches, obtained using SF 6 -based plasma etching, on the 4H-SiC polytype substrate. An interferometric algorithm that finds the endpoint to stop etching governed the trench depth. Scanning electron microscopy, transmission electron microscopy, atomic force microscopy, and X-ray photoelectron spectroscopy analyses stated the high quality and uniformity of the trenches. These materials are particularly promising for the fabrication of the SiC MOSFET to be implemented in the manufacturing of power devices.

Chemical and Morphological Modifications Induced by Argon Plasma Treatments on Fluorinated Polybenzoxazole Films

“…1,2 The newest generation of microelectronic devices is characterized by the increase in device density and fabrication complexity but, simultaneously, by the decrease in thickness and dimensions. 3 This condition represents a challenge for the fan-out waferlevel package, which requires the employment of electronic packaging materials with low dielectric properties, also able to dissipate heat. 4 Microelectronic packaging represents an important step during the fabrication of microelectronic devices because it provides the electrical connection/isolation, mechanical support, thermal cooling, and physical protection of the electronic components.…”

“…In recent years, the fabrication of integrated circuits (ICs) has increased in response to the growing demand for microelectronic devices, such as smartphones, tablets, laptops, flexible electronics, and electric vehicles. , The newest generation of microelectronic devices is characterized by the increase in device density and fabrication complexity but, simultaneously, by the decrease in thickness and dimensions . This condition represents a challenge for the fan-out wafer-level package, which requires the employment of electronic packaging materials with low dielectric properties, also able to dissipate heat …”

“…1 , 2 The newest generation of microelectronic devices is characterized by the increase in device density and fabrication complexity but, simultaneously, by the decrease in thickness and dimensions. 3 This condition represents a challenge for the fan-out wafer-level package, which requires the employment of electronic packaging materials with low dielectric properties, also able to dissipate heat. 4 …”

Creation and Optimisation of Plasma Etch Processes for the Manufacture of Silicon Microstructures

“…Plasma etch technology would be compatible with other materials for the creation of MN, given the right process flow. Although significantly more expensive, Silicon Carbide (SiC) [194,195] is one such material of interest due to its compatibility with dry etch processing [196][197][198] and the mechanical advantages it holds over silicon [195].…”

“…The use of SiC for microneedles would require a new design and process flow, due to the differences between etching Si and SiC. The history of etching SiC is also less explored than Si, and although plasma-based SiC etches have been developed for specific applications [198,204] significant process work would be required to produce MN devices in SiC.…”