A low-cost horizontal current bipolar transistor (HCBT) technology for the BiCMOS integration with FinFETs

Suligoj, Tomislav; Liu, Haitao; Sin, J.K.O.; Tsui, Kenneth; Chu, Rongming; Chen, Kevin J.; Biljanović, Petar; Wang, Kang L.

doi:10.1016/j.sse.2004.05.075

Cited by 5 publications

(1 citation statement)

References 3 publications

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“…The etched part of the -hill reduces the collector-base junction area and minimizes the peripheral component of . As can be seen in Table I, the of 9 fF is lower than in the case of the unetched collector [8] with the respect to the emitter area, despite the higher collector doping. Actually, the volume of parasitic regions is minimized in the presented HCBT process and a near-ideal intrinsic transistor is obtained (Fig.…”

Section: Hcbt Device Performancementioning

confidence: 82%

A new HCBT with a partially etched collector

Suligoj

Biljanović

Sin

et al. 2005

IEEE Electron Device Lett.

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A novel horizontal current bipolar transistor (HCBT), suitable for the integration with the pillar-like MOSFETs, is processed with the reduced volume of the parasitic regions, achieved by the partial etching of the collector -hill region and the self-protection of the p + extrinsic base from tetramethyl ammonium hydroxide etch-back. The HCBT fabricated by a low-cost technology exhibits the cutoff frequency ( ) of 30.4 GHz, the maximum frequency of oscillations ( max ) of 35 GHz and the collector-emitter breakdown voltage (BV CEO ) of 4.2 V, which are the highest and the highest BV CEO product among the lateral bipolar transistors (LBTs).Index Terms-BiCMOS integrated circuits, bipolar transistors, chemical vapor deposition (CVD), microwave measurements, semiconductor device ion implantation, silicon-on-insulator (SOI) technology.

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Section: Hcbt Device Performancementioning

confidence: 82%