Horizontal Current Bipolar Transistor (HCBT) Process Variations for Future RF BiCMOS Applications

Suligoj, Tomislav; Sin, J.K.O.; Wang, K.L.

doi:10.1109/ted.2005.850636

Cited by 11 publications

(3 citation statements)

References 18 publications

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“…Beside the characterization of transistor-level electrical characteristics, the HCBTs' performance is examined by using them in circuits. For this purpose, a down-converting mixer is designed and measured as the first RF circuit fabricated in HCBT technology [13]. Mixers are RF building blocks widely used in heterodyne transceivers [23].…”

Section: Hcbt Circuit Designmentioning

confidence: 99%

“…At first, the technology concept has been demonstrated by using coarse contact lithography having transistors of with cutoff frequency (f T ) of 4.4 GHz and collector-emitter breakdown voltage (BV CEO ) of 15.8 V [11]. In the second generation of HCBT, the 0.5 μm stepper lithography has been used reaching f T =30.4 GHz and BV CEO =4.2 V which became the fastest lateral bipolar transistor [12,13]. Finally, HCBT has been integrated with CMOS and further optimized having f T =51 GHz and BV CEO =3.4 V [5,14], which is among the fastest pure-silicon bipolar transistors reported [15].…”

Section: Introductionmentioning

confidence: 99%

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Horizontal current bipolar transistor (HCBT) - a low-cost, high-performance flexible BiCMOS technology for RF communication applications

Suligoj¹,

Koricic²,

Žilak³

et al. 2015

FACTA U EE

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In an overview of Horizontal Current Bipolar Transistor (HCBT) technology, the state-of-the-art integrated silicon bipolar transistors are described which exhibit f T and f max of 51 GHz and 61 GHz and f T BV CEO product of 173 GHzV that are among the highest-performance implanted-base, silicon bipolar transistors. HBCT is integrated with CMOS in a considerably lower-cost fabrication sequence as compared to standard vertical-current bipolar transistors with only 2 or 3 additional masks and fewer process steps. Due to its specific structure, the charge sharing effect can be employed to increase BV CEO without sacrificing f T and f max. Moreover, the electric field can be engineered just by manipulating the lithography masks achieving the high-voltage HCBTs with breakdowns up to 36 V integrated in the same process flow with high-speed devices, i.e. at zero additional costs. Double-balanced active mixer circuit is designed and fabricated in HCBT technology. The maximum IIP3 of 17.7 dBm at mixer current of 9.2 mA and conversion gain of-5 dB are achieved.

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Section: Hcbt Circuit Designmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Horizontal current bipolar transistor (HCBT) - a low-cost, high-performance flexible BiCMOS technology for RF communication applications

Suligoj¹,

Koricic²,

Žilak³

et al. 2015

FACTA U EE

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“…On the other hand, a Horizontal Current Bipolar Transistor (HCBT), is a compact structure processed in a low-cost technology, as demonstrated in [5,6]. The HCBT is particularly suitable for the integration with advanced MOSFET devices, such as SOI MOS, FinFETs [7] and vertical MOS [8], since its active transistor region is processed in the sidewall of the pillar/hill, as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

A BV>inf<CEO>/inf<Engineering in Horizontal Current Bipolar Transistor (HCBT) Technology

Suligoj

Koricic

Biljanović

MELECON 2006 - 2006 IEEE Mediterranean Electrotechnical Conference

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A need for different breakdown voltages of verticalcurrent bipolar transistors on the same chip is accomplished by added process complexity and increased fabrication costs. In Horizontal Current Bipolar Transistor (HCBT) technology, the devices with different collector-emitter breakdown voltages (BV CEO ) can be fabricated just by changing the mask dimensions, without any addition to process flow. Extrinsic base has a main effect on BV CEO due to charge sharing effect. Cutoff frequency and maximum frequency of oscillations of HCBT structures with different extrinsic base widths are measured together with BV CEO . The optimum f T BV CEO product of more than 100 GHzV is achieved at extrinsic base width of 0.8 μm. The charge sharing effect is analyzed by 2D simulations and the reduction of the peak electric field in the intrinsic region is shown. Moreover, the increase of BV CEO at low base currents is measured and explained by the current gain reduction due to SHR recombination in emitter-base depletion region. The breakdown occurs in different regions of HCBT structure at low and high currents.

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Improving bulk FinFET DC performance in comparison to SOI FinFET

Poljak

Jovanović

Suligoj

2009

Microelectronic Engineering

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Horizontal Current Bipolar Transistor (HCBT) Process Variations for Future RF BiCMOS Applications

Cited by 11 publications

References 18 publications

Horizontal current bipolar transistor (HCBT) - a low-cost, high-performance flexible BiCMOS technology for RF communication applications

Horizontal current bipolar transistor (HCBT) - a low-cost, high-performance flexible BiCMOS technology for RF communication applications

A BV>inf<CEO>/inf<Engineering in Horizontal Current Bipolar Transistor (HCBT) Technology

Improving bulk FinFET DC performance in comparison to SOI FinFET

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